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Irradiation Induced Effects at Interfaces in a Nanocrystalline Ceria Thin Film on a Si Substrate

Published online by Cambridge University Press:  18 March 2013

Philip D Edmondson
Affiliation:
Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA
Neil P Young
Affiliation:
Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK
Chad M Parish
Affiliation:
Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA
Fereydoon Namavar
Affiliation:
University of Nebraska Medical Center, Omaha, NE 68196, USA
William J Weber
Affiliation:
Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA Department of Materials Science and Technology, University of Tennessee, Knoxville, TN 37996, USA
Yanwen Zhang
Affiliation:
Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA Department of Materials Science and Technology, University of Tennessee, Knoxville, TN 37996, USA
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Abstract

Thin films of nanocrystalline ceria on a Si substrate have been irradiated with 3 MeV Au+ ions to fluences of up to 1x1016 ions cm-2, at temperatures ranging between 160 to 400 K. During the irradiation, a band of contrast is observed to form at the thin film/substrate interface. Analysis by scanning transmission electron microscopy in conjunction with energy dispersive and electron energy loss spectroscopy techniques revealed that this band of contrast was a cerium silicate amorphous phase, with an approximate Ce:Si:O ratio of 1:1:3.

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Copyright © Materials Research Society 2013 

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Irradiation Induced Effects at Interfaces in a Nanocrystalline Ceria Thin Film on a Si Substrate
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