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IR Diagnostics of MOCVD Reaction Chemistry

Published online by Cambridge University Press:  22 February 2011

Bruce H. Weiller
Bruce H. Weiller*
Affiliation:
The Aerospace Corporation, Mechanics and Materials Technology Center, PO Box 92957 Los Angeles, CA 90009
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Abstract

The gas-phase chemical reactions in the Metallorganic Chemical Vapor Deposition (MOCVD) of A1N and TiN have been studied using IR spectroscopy. The products formed from the reaction of trimethyl aluminum (TMA) and NH3 were compared to those from the reaction of TMAwith NF3 using a static gas-phase IR cell. Reaction with NH3 is rapid at 25 °C, and the IR spectrum of the product is consistent with the acid-base adduct (CH3)3Al-NH3. At 25 °C, no reaction between TMA and NF3 was observed. However, at 58 °C a slow reaction occurredto give (CH3)2AlF. The reaction of Ti(N(CH3)2)4 with NH3 was also studied using a flow-tube reactor with a sliding injector port that provides control over the reaction time between two reactive flows. By monitoring the disappearance of Ti(N(CH3)2)4 as a function of NH3 partial pressure and reaction time, we have obtained a preliminary estimate of the rate constant as ∼ 10−16 cm3 molecule−1 s−1 at 25 °C. This result confirms that the reaction is rapid even at room temperature and demonstrates the utility of the flow-tube reactor and FTIR spectrometer for studies of MOCVD chemistry.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 605
Copyright
Copyright © Materials Research Society 1993

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References

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