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Ion-Plating Deposition of MgO Protective Layer for AC-Plasma Display Panels

Published online by Cambridge University Press:  17 March 2011

Kazuo Uetani
Affiliation:
R&D Center, ShinMaywa Industries, Ltd., 6-107 Tajikano-cho, Nishinomiya, Hyogo 663-8001, Japan
Hiroshi Kajiyama
Affiliation:
Hitachi Research Laboratory, Hitachi, Ltd., 7-1-1 Omika-cho, Hitachi, Ibaraki 319-1292, Japan
Akira Kato
Affiliation:
Hitachi Research Laboratory, Hitachi, Ltd., 7-1-1 Omika-cho, Hitachi, Ibaraki 319-1292, Japan
Isao Tokomoto
Affiliation:
R&D Center, ShinMaywa Industries, Ltd., 6-107 Tajikano-cho, Nishinomiya, Hyogo 663-8001, Japan
Yasuhiro Koizumi
Affiliation:
R&D Center, ShinMaywa Industries, Ltd., 6-107 Tajikano-cho, Nishinomiya, Hyogo 663-8001, Japan
Koichi Nose
Affiliation:
R&D Center, ShinMaywa Industries, Ltd., 6-107 Tajikano-cho, Nishinomiya, Hyogo 663-8001, Japan
Yasushi Ihara
Affiliation:
R&D Center, ShinMaywa Industries, Ltd., 6-107 Tajikano-cho, Nishinomiya, Hyogo 663-8001, Japan
Ken-ichi Onisawa
Affiliation:
Hitachi Research Laboratory, Hitachi, Ltd., 7-1-1 Omika-cho, Hitachi, Ibaraki 319-1292, Japan
Tetsuroh Minemura
Affiliation:
Hitachi Research Laboratory, Hitachi, Ltd., 7-1-1 Omika-cho, Hitachi, Ibaraki 319-1292, Japan
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Abstract

MgO thin films as a protective layer in plasma display panels (PDPs) were deposited by an advanced ion-plating (AIP) apparatus that we had developed. The AIP method enables plasma operation at low-pressures of 10−3 Pa. The MgO thin films were mainly (111) oriented with a small amount of randomly oriented textures. The preferred orientation of the films was dependent on deposition conditions; oxygen content and substrate temperature. Fine columnar structures grew with sharp apexes at the film surface. Secondary electron emission coefficient from a film deposited by the AIP method was higher than that by a conventional electron beam evaporation method. The MgO protective layer could be expected to improve PDPs by our AIP deposition.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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References

1. Uchiike, H., Miura, K., Nakayama, N., Shinoda, T. and Fukuyama, Y.: IEEE Trans. Electron Devices ED–23, 1211 (1976).CrossRefGoogle Scholar
2.Japanese patent, No.1560327.Google Scholar
3. Uetani, K., Kajiyama, H., Yamaguchi, T., Nose, K., Onisawa, K. and Minemura, T.: Mater. Trans., JIM 41, 1161 (2000).CrossRefGoogle Scholar
4.JCPDS-card 75-0447 (1997).Google Scholar

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