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Investigation of Ge, As, and Au Diffusion in Non-Alloyed Epitaxial Au-Ge Ohmic Contacts to n-GaAs Using Secondary Ion Mass Spectroscopy Backside Sputter Depth-Profiling

Published online by Cambridge University Press:  26 February 2011

H. S. LEE ,
R. T. Lareau ,
S. N. Schauer ,
R. P. Moerkirk ,
K. A. Jones ,
S. Elagoz ,
W. Va Vra  and
R. Clarke
H. S. LEE
Affiliation:
Electronics Technology and Devices Laboratory, U.S. Army, Fort Monmouth, NJ 07703–5601
R. T. Lareau
Affiliation:
Electronics Technology and Devices Laboratory, U.S. Army, Fort Monmouth, NJ 07703–5601
S. N. Schauer
Affiliation:
Electronics Technology and Devices Laboratory, U.S. Army, Fort Monmouth, NJ 07703–5601
R. P. Moerkirk
Affiliation:
Electronics Technology and Devices Laboratory, U.S. Army, Fort Monmouth, NJ 07703–5601
K. A. Jones
Affiliation:
Electronics Technology and Devices Laboratory, U.S. Army, Fort Monmouth, NJ 07703–5601
S. Elagoz
Affiliation:
Dept. of Physics, University of Michigan, Ann Arbor, MI 48109
W. Va Vra
Affiliation:
Dept. of Physics, University of Michigan, Ann Arbor, MI 48109
R. Clarke
Affiliation:
Dept. of Physics, University of Michigan, Ann Arbor, MI 48109
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Abstract

A SIMS backside sputter depth-profile technique using marker layers is employed to characterize the diffusion profiles of the Ge, As, and Au in the Au-Ge contacts after annealing at 320 C for various times. This technique overcomes difficulties such as ion beam mixing and preferential sputtering and results in high depth resolution measurements since diffusion profiles are measured from low to high concentration. Localized reactions in the form of islands were observed across the surface of the contact after annealing and were composed of Au, Ge, and As, as determined by SIMS imaging and Auger depth profiling. Backside SIMS profiles indicate both Ge and Au diffusion into the GaAs substrate in the isalnd regions. Ohmic behavior was obtained after a 3 hour anneal with a the lowest average specific contact resistivity found to be ∼ 7 × 100−6 Ω- cm2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 473
Copyright
Copyright © Materials Research Society 1992

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References

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