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Investigation of a-Si:H p-i-n Solar Cell Degradation

Published online by Cambridge University Press:  10 February 2011

Franc Smole ,
Aleč Groznik ,
Marko Topič ,
Pavle Popović  and
Jože Furlan
Franc Smole
Affiliation:
University of Ljubljana, Faculty of Electrical Engineering Tržaška 25, 1000 Ljubljana, Slovenia
Aleč Groznik
Affiliation:
University of Ljubljana, Faculty of Electrical Engineering Tržaška 25, 1000 Ljubljana, Slovenia
Marko Topič
Affiliation:
University of Ljubljana, Faculty of Electrical Engineering Tržaška 25, 1000 Ljubljana, Slovenia
Pavle Popović
Affiliation:
University of Ljubljana, Faculty of Electrical Engineering Tržaška 25, 1000 Ljubljana, Slovenia
Jože Furlan
Affiliation:
University of Ljubljana, Faculty of Electrical Engineering Tržaška 25, 1000 Ljubljana, Slovenia
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Abstract

Based on measured characteristics of degraded p-i-n structures, simulations of degraded structures were performed using our numerical simulator ASPIN in order to fit and explain pronounced hump-shaped voltage-dependent internal collection efficiency (ICE) characteristics under weak short-wavelength illumination. Agreement with measured hump-shaped ICE characteristics was obtained only if in addition to the introduction of light-induced dangling bond defect states, their capture cross-sections were also increased, in particular capture crosssection for the charged defect states. This causes a change in occupancy of defect states at the p-i interface and front part of the i-layer under forward bias. Consequently, it increases the electric field in the front part of the cell, which results in recovery of the ICE.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 221
Copyright
Copyright © Materials Research Society 1996

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