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Intersubband Transitions in InxGa1-xAs/AlGaAs Multiple Quantum Wells for Long Wavelength Infrared Detection

Published online by Cambridge University Press:  11 February 2011

Clayton L. Workman
Affiliation:
Center for Semiconductor Physics in Nanostructures (C-SPIN) and the Microelectronics-Photonics Program, University of Arkansas, Fayetteville, AR 72701, USA
Zhiming Wang
Affiliation:
Center for Semiconductor Physics in Nanostructures (C-SPIN) and the Microelectronics-Photonics Program, University of Arkansas, Fayetteville, AR 72701, USA
Wenquan Ma
Affiliation:
Center for Semiconductor Physics in Nanostructures (C-SPIN) and the Microelectronics-Photonics Program, University of Arkansas, Fayetteville, AR 72701, USA
Christi E. George
Affiliation:
Center for Semiconductor Physics in Nanostructures (C-SPIN) and the Microelectronics-Photonics Program, University of Arkansas, Fayetteville, AR 72701, USA
R. Panneer Selvam
Affiliation:
Center for Semiconductor Physics in Nanostructures (C-SPIN) and the Microelectronics-Photonics Program, University of Arkansas, Fayetteville, AR 72701, USA
Gregory J. Salamo
Affiliation:
Center for Semiconductor Physics in Nanostructures (C-SPIN) and the Microelectronics-Photonics Program, University of Arkansas, Fayetteville, AR 72701, USA
Qiaoying Zhou
Affiliation:
Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, NM 87131, USA
M. Omar Manasreh
Affiliation:
Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, NM 87131, USA
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Abstract

We report on intersubband transitions in InxGa1-xAs/AlGaAs multiple quantum wells (MQWs) grown by molecular beam epitaxy. The conduction band offset for this material system is larger than that of the well known GaAs/AlGaAs system, thus making it possible to design, grow, and fabricate quantum well infrared photodetectors operational beyond the 14 μm spectral region with minimized dark current. We have grown InxGa1-xAs/AlGaAs MQWs with indium compositions ranging from x = 0.08 to 0.20 verified by in situ RHEED oscillations, band offset measurements, and high-resolution X-ray diffraction. Band-to-band transitions were verified by photoluminescence measurements, and intersubband transitions were measured using Fourier transform infrared (FTIR) spectroscopy. Due to the high strain and introduction of dislocations associated with the high indium content, wells with indium compositions above ∼ 0.12 did not result in intersubband transitions at silicon doping levels of 2×1018 cm-3. A thick linear graded InxGa1-xAs buffer was grown below the MQW structures to reduce the strain and resulting dislocations. Intersubband transitions were measured in InxGa1-xAs wells with indium compositions of x = 0.20 and greater when grown on top of the linear graded buffer. In addition to these results, FTIR measurements on InGaAs/AlGaAs MQW multi-color, long-wavelength infrared detector structures are reported.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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References

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