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Intermixing at the CdS/CdTe Interface and its Effect on Device Performance

Published online by Cambridge University Press:  10 February 2011

R. G. Dhere ,
D. S. Albin ,
D. H. Rose ,
S. E. Asher ,
K. M. Jones ,
M. M. Al-Jassim ,
H. R. Moutinho  and
P. Sheldon
R. G. Dhere
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
D. S. Albin
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
D. H. Rose
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
S. E. Asher
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
K. M. Jones
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
M. M. Al-Jassim
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
H. R. Moutinho
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
P. Sheldon
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
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Abstract

A study of the CdS/CdTe interface was performed on glass/SnO2/CdS/CdTe device structures. CdS layers were deposited by chemical solution growth to a thickness of 80–100 nm, and CdTe was deposited by close-spaced sublimation at substrate temperatures of 500°, 550°, and 600°C. Post-deposition CdCl2 heat treatment was performed at 400°C. Samples were analyzed by optical spectroscopy, secondary ion mass spectrometry (SIMS), spectral response, and current-voltage measurements. SIMS analysis shows that the intermixing of CdS and CdTe is a function of substrate temperature and post-deposition CdCl2 heat treatment. The degree of intermixing increases with increases in substrate temperature and the intensity of CdCl2 heat treatment. Optical analysis and X-Ray diffraction data show that the phases of CdSxTe1-x are also a function of the same parameters. Formation of a Te-rich CdSxTe1-x alloy is favored for films deposited at higher substrate temperatures. Spectral response of the devices is affected by the degree of alloying at the interface. The degree of alloying is indicated by simultaneous changes in long wavelength response (due to the formation of lower bandgap intermixed CdSxTe1-x) and the short wavelength response (due to the change in CdS thickness). Device performance is heavily influenced by alloying at the interface. With optimized intermixing, improvements in Voc, and diode quality factors are observed in the resulting devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 426: Symposium J – Thin Films for Photovoltaic and Related Device , 1996 , 361
Copyright
Copyright © Materials Research Society 1996

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