Skip to main content Accessibility help
×
Home
Hostname: page-component-79b67bcb76-jn9wc Total loading time: 0.486 Render date: 2021-05-12T14:25:06.658Z Has data issue: false Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": false, "newCiteModal": false, "newCitedByModal": true, "newEcommerce": true }

Interfacial Properties of Si-Si3N4formed by Remote Plasma Enhanced Chemical Vapor Deposition

Published online by Cambridge University Press:  10 February 2011

V. Misra
Affiliation:
Departments of Electrical and Computer Engineering North Carolina State University, Raleigh, NC 27695
H. Lazar
Affiliation:
Departments of Electrical and Computer Engineering North Carolina State University, Raleigh, NC 27695
M. Kulkami
Affiliation:
Departments of Electrical and Computer Engineering North Carolina State University, Raleigh, NC 27695
Z. Wang
Affiliation:
Departments of Electrical and Computer Engineering North Carolina State University, Raleigh, NC 27695
G. Lucovsky
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695
J.R. Hauser
Affiliation:
Departments of Electrical and Computer Engineering North Carolina State University, Raleigh, NC 27695
Get access

Abstract

This paper presents results on the interfacial properties of Si3N4on NMOSFETs and PMOSFETs. Silicon nitride, formed by remote plasma enhanced chemical vapor deposition, was found to display severely degraded interfacial properties, in which the PMOS interfaces were significantly more degraded than NMOS interfaces. This is believed to be indicative of a relatively high density of interface traps located below the Si mid-gap that inhibit hole channel formation. These traps are believed to originate from the intrinsic nature of Si- Si3N4interface. Bonding constraint theory was applied to conclude that the Si-Si3N4interface is over-constrained compared to the Si-SiO2interface and consequently results in a higher intrinsic defectivity. A systematic study of the oxygen and hydrogen content in the silicon nitride film and its effect on electrical properties is also presented. Based on the electrical results it is concluded that the presence of oxygen either as a) a monolayer at the interface or b) within the silicon nitride film can produce high quality interfaces suitable for aggressively scaled CMOS devices.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below.

References

[1] Semiconductor Industry Association, The National technology Roadmap for Semiconductors.Google Scholar
[2] Campbell, S.A., Gilmer, D.C., Wang, X.-C., Hsieh, M.-T., Kim, H.-S., Gladfelter, W.L. and Yan, J.,“ MOSFET transistors fabricated with High Permittivity TiO2 Dielectrics”, IEEE Trans. On ED, 44, 104, 1997.10.1109/16.554800CrossRefGoogle Scholar
[3] Lau, W.S., “The identification and Suppression of Defects responsible for electrical hysteresis in metal-nitride-silicon capacitors”, Jap. Journ. Of Appl. Phys., Vol 29, no 5, p690, 1990.10.1143/JJAP.29.L690CrossRefGoogle Scholar
[4] Hasegawa, S., Ikeda, M., Inokuma, T., and Kurata, Y.,“ Bonding structure and characteristics of defects of near-stoichiometric silicon nitride films”,J. Appl. Phys. Vol 80, no 5, p 2896, 1996.10.1063/1.363142CrossRefGoogle Scholar
[5] Ma, T.P.,“ Making silicon nitride film a viable gate dielectric”, IEEE Trans. Electron Devices, Vo145, pp680, mar 1998.10.1109/16.661229CrossRefGoogle Scholar
[6] Kim, B.Y., Luan, H.F., Kwong, D.L.,“Ultra thin high quality nitride/oxide stack gate dielectric fabricated by in-situ rapid thermal processing”, IEDM Tech. Digest, pp463, 1997.Google Scholar
[7] Ma, Y., Yasuda, T., Lucovsky, G.,“ Ultrathin device quality oxide-nitride-oxide heterostructure formed by remote plasma enhanced chemical vapor deposition”, Appl. Phys. Lett., vol. 64, pp2226, 1994.10.1063/1.111681CrossRefGoogle Scholar
[8] Lu, Z., Williams, M.J., Santos-Filho, P.F., and Lucovsky, G.,“ Fourier transform infrared study of rapid thermal annealing of a Si:N:H(D) films prepared by remote plasma-enhanced chemical vapor deposition”, J. Vac. Sci. Technology. A, vol. 13, p607, 1995.10.1116/1.579794CrossRefGoogle Scholar
[9] Parker, C.G., G. Lucovsky and Hauser, J.R.,“ Ultrathin Oxide-Nitride Gate Dielectric MOSFET‘s”, IEEE Electron Device Letter, vol 19, p106, 1998.10.1109/55.663529CrossRefGoogle Scholar
[10] Wu, Y. and Lucovsky, G., Ultrathin Nitride/Oxide (N/O) Gate Dielectrics for pΛ+- Polysilicon Gated PMOSFET‘s Prepared by a Combined Remote Plasma Enhanced CVD/Thermal Oxidation Process“ Vol 19 Number 10, p367, 1998 Google Scholar
[11] Hauser, J.R., private communication.Google Scholar
[12] Momose, H., Kitagawa, S., Yamabe, K., Iwai, H.,” Hot carrier related phenomenon for nand p- MOSFETs with nitride gate oxide by RTP”, IEDM Tech. Dig., pp267-270, 1989.Google Scholar
[13] Hori, T., Naiot, Y., Iwasaki, H., and Esaki, H.,“ Interface states and fixed charges in nanometer-range thin nitrided oxides prepared by rapid thermal nitridation”, IEEE Electron Device Letters, vol-7, p 669, 1986.10.1109/EDL.1986.26514CrossRefGoogle Scholar
[14] Hori, T., “ Inversion layer mobility under high normal field in nitrided-oxide MOSFET‘s”, IEEE Trans. Elec. Dev. Vol 37, pp2058, 1990.10.1109/16.57169CrossRefGoogle Scholar
[15] Ginovker, A.S., Gristsenko, V.A. and Sinitsa, S.P., “Two-band conduction of amorphous silicon nitride,“ Phys. Status Solidi (a), vo126, p. 489, 1974.10.1002/pssa.2210260211CrossRefGoogle Scholar
[16] Schroder, Dieter, Semiconductor Material and Device Characterization, Wiley Interscience, 2nd edition, 1998.Google Scholar
[17] Sekine, K., Saito, Y., M. Hirayama and Ohmi, T., “Direct Nitridation of Silicon surfaces at Ultra-low-temperature by High Density and Low-Energy Ion Bombardment", ISSM, 1998.Google Scholar
[18] Schmidt, J., Schuurmans, F., Sinke, W., Glunz, S., Aberle, A.,“ Observation of mutilple defect states at silicon-silicon nitride interfaces fabricated by low-frequency plasma-enhanced chemical vapor deposition”, Appl. Phys. Lett. Vol 71, no 2, p 252, 1997.10.1063/1.119512CrossRefGoogle Scholar
[19] Philips, J., Journal of Non-crystal solids, 34, 153, 1979.10.1016/0022-3093(79)90033-4CrossRefGoogle Scholar
[20] Lucovsky, G., Philips, J., Wu, Y., Niimi, H. and Misra, V., “Bonding constraint-induced defect formation at Si-dielectric interfaces and internal interfaces in dual-layer gate dielectrics”, App. Phys. Lett.Apr 5, 1999.10.1116/1.590831CrossRefGoogle Scholar

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Interfacial Properties of Si-Si3N4formed by Remote Plasma Enhanced Chemical Vapor Deposition
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Interfacial Properties of Si-Si3N4formed by Remote Plasma Enhanced Chemical Vapor Deposition
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Interfacial Properties of Si-Si3N4formed by Remote Plasma Enhanced Chemical Vapor Deposition
Available formats
×
×

Reply to: Submit a response


Your details


Conflicting interests

Do you have any conflicting interests? *