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Interfacial layer bonding and Dielectric properties of Hf-O-N gate dielectric thin films

Published online by Cambridge University Press:  01 February 2011

Karthik Ramani
Affiliation:
rkarthik@ufl.edu, University of Florida, Singh Research Group, Materials Science and Engineering, ., FL, ., United States, 352-392-5714, 352-846-0326
Chad Robert Essary
Affiliation:
cessa@mse.ufl.edu, University of Florida, Gainesville, FL, 32611, United States
Valentin Craciun
Affiliation:
vcrac@mse.ufl.edu, University of Florida, Gainesville, FL, 32611, United States
Rajiv K Singh
Affiliation:
rsing@mse.ufl.edu, University of Florida, Gainesville, FL, 32611, United States
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Abstract

The electrical response and interfacial layer characterization of nitrogen doped HfO2 gate dielectric thin films are reported. The films were processed at relatively low temperature (~ 400 0C) by pulsed laser deposition and ultra-violet radiation assisted oxidation technique. Nitrogen incorporation in the hafnia films led to O-N and Hf-Si-O-N bonding in the bulk and at hafnia-Si interface respectively. The nitrogen doped hafnia films exhibited a leakage current density lower than 10E-5 A/sq cm at -1 V and a simulated equivalent oxide thickness of 9.4 Å.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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Interfacial layer bonding and Dielectric properties of Hf-O-N gate dielectric thin films
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