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Interband Radiative Recombination Calculations In Ternary Nitride Solid Solutions

Published online by Cambridge University Press:  10 February 2011

A. V. Dmitriev  and
A. L. Oruzheinikov
A. V. Dmitriev
Affiliation:
Department of Low Temperature Physics, Faculty of Physics, M.V. Lomonosov Moscow State University, Moscow, 119899, Russia. Dmitriev@lt.phys.msu.su
A. L. Oruzheinikov
Affiliation:
Department of Low Temperature Physics, Faculty of Physics, M.V. Lomonosov Moscow State University, Moscow, 119899, Russia. Dmitriev@lt.phys.msu.su
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Abstract

We calculated for the first time the interband radiative recombination rate R in the wide-gap semiconductors GaN, InN and AIN crystallizing in the hexagonal wurtzite structure, and in ternary InxGayAl1−x−yN alloys including also binary solid solutions GaxAl1−xN, InxAl1−xN and GaxIn1−xN. All our calculations were based on experimental data on energy band structures and optical absorption spectra of the nitride materials. The radiative recombination coefficient B defined according to the equation R = B np, n and p being the carrier densities, is higher in InN and lower in GaN, taking intermediate values in AlN. For example, B=(2.7, 0.4 and 0.15) × 10−10cm3/s for InN, AIN and GaN, correspondingly. The carrier lifetime in GaN equals 60ns at 300K and n=1 × 1017cm−3. The radiative recombination coefficient increases with the concentration of indium nitride in the ternary alloys.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 851
Copyright
Copyright © Materials Research Society 1998

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