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In-Situ Hrem Observation of Low Temperature Fracture Near the Oxide Surface of Iron Doped Silicon

Published online by Cambridge University Press:  22 February 2011

M.H. Rhee ,
J.C. Barry  and
W.A. Coghlan
M.H. Rhee
Affiliation:
Chemical, Bio-, and Materials Engineering Dept., Arizona State University, Tempe, AZ 85287
J.C. Barry
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ 85287
W.A. Coghlan
Affiliation:
Chemical, Bio-, and Materials Engineering Dept., Arizona State University, Tempe, AZ 85287
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Abstract

Fracture of iron-doped silicon has been studied using HREM. Fractures were introduced into cross section specimens of oxidized silicon using microhardness indents. A crack is extended using thermal stresses generated by the electron beam. The tip of the advancing crack is made up of two or more parallel sub-cracks. As the crack grows, one of these sub-cracks appears to dominate while the multiple crack front still exists at the tip. Also shear strain has been seen across the crack interface. The process appears to be much more complicated that existing models suggest.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 153: Symposium J – Interfaces Between Polymers, Metals, and Ceramics , 1989 , 109
Copyright
Copyright © Materials Research Society 1989

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References

[1] Hirsch, P.B., Roberts, S.C. and Samuels, J., Revue Phys. Appl. 23, 490–418 (1988).Google Scholar
[2] Lawn, B.R., Hocky, B.J. and Wiederhorn, S.M., J. Mater. Sci. 15, 1207–1223 (1980).Google Scholar
[3] Rhee, M.H. and Coghlan, W.A., Proc. 46th Annual Meeting of EMSA, Ed: Bailey, G.W., Milwaukee, WI, pp. 892–893 (1988).Google Scholar
[4] Frankl, D.R., J. Appl. Phys. 34 3514–3516 (1963).Google Scholar
[5] Swain, M.V., Lawn, B.R. and Burns, S.J., J. Mater. Sci. 9, 175–183 (1974).Google Scholar
[6] Tanaka, Hidehiko, Bando, Yoshio, Inomata, Yoshizo and Mitomo, Mamoru, J. Am. Ceram. Soc. 71, C–32 (1988).Google Scholar
[7] Rohatgi, A., Davis, J.R., Hopkins, R.H., and McMullin, P.G., Solid-State Electronics, 26, 1039–1051 (1983).Google Scholar
[8] Jones, R., J. Physique Colloq. 44, C4–61 (1983).Google Scholar
[9] Hirsch, P.B., J. Physique Colloq. 42, C3–149 (1981)Google Scholar
[10] Sinclair, J.E. and Lawn, B.R., Proc. R. Soc. Lond. A.329, 83–103 (1972).Google Scholar
[11] Haneman, D. and Lagally, M.G., J. Vac. Sci. Tecnol. A6, 1451–1456 (1988).Google Scholar
[12] Clarke, D.R., Lawn, B.R. and Roach, D.H., in Fracture Mechanics of Ceramics, edited by Bradt, R.C., Evans, A.G., Hassleman, D.P.H., and Lange, F.F. (Plenum, New York, 1986) vol. 8, pp. 341–350 Google Scholar