Skip to main content Accessibility help
×
Home
Hostname: page-component-568f69f84b-cgcw8 Total loading time: 0.198 Render date: 2021-09-23T01:13:36.422Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": true, "newCiteModal": false, "newCitedByModal": true, "newEcommerce": true, "newUsageEvents": true }

InGaN Laser Diodes Grown on SiC Substrate Using Low-Pressure Metal-Organic Vapor Phase Epitaxy

Published online by Cambridge University Press:  10 February 2011

A. Kuramata
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan
K. Domen
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan
R. Soejima
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan
K. Horino
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan
S. Kubota
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan
T. Tanahashi
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan
Get access

Abstract

We report the crystal growth and the characteristics of InGaN multiple quantum well (MQW) laser diodes grown on a 6H-SiC substrate using a low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). We discuss the buffer layer, the control of InGaN and AlGaN alloy composition, the magnesium doping of GaN and AlGaN, and the characteristics of the MQW structure. We also demonstrate the room-temperature pulsed operation of the laser diode. The threshold voltage was reduced to 15 V by improving the p-contact resistance. The threshold current was reduced to 500 mA by changing the MQW structure and employing high reflection coating.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H. and Sugimoto, Y.: Jpn. J. Appl. Phys 35 (1996) L74.Google Scholar
[2] Akasaki, I., Sota, S., Sakai, H., Tanaka, T., Koike, M. and Amano, H.: Electron. Lett. 32 (1996) 1105.Google Scholar
[3] Itaya, K., Onomura, M., Nishio, J., Sugiura, L., Saito, S., Suzuki, M., Rennie, J., Nunoue, S., Yamamoto, M., Fujimoto, H., Kokubun, Y., Ohba, Y., Hatakoshi, G. and Ishikawa, M.: Jpn. J. Appl. Phys 35 (1996) L1315.Google Scholar
[4] Mack, M.P., Abare, A., Aizcorbe, M., Peter, Kozodoy ,Keller, S., Mishra, U. K., Coldren, L.,and DenBaars, Steven: Internet J. Nitride Semicond. Res. 2 (1997) 41.Google Scholar
[5] Nakamura, F., Kobayashi, T., Asatsuma, T., Funato, K., Yanashima, K., Hashimoto, S., Naganurna, K., Tomioka, S., Miyajima, T., Morita, E., Kawai, H., and Ikeda, M.: Proceedings of The Second International Conference on Nitride Semiconductors (1997) p. 460.Google Scholar
[6] Kneissl, M. et. al.: unpublished. Oral presentation at The Second International Conference on Nitride Semiconductors (1997).Google Scholar
[7] Yamada, N., Kaneko, Y., Watanabe, S., Yamaoka, Y., Hidaka, T., Nakagawa, S., Marenger, E., Takeuchi, T., Yamaguchi, S., Amano, H., and Akasaki, I.: Proceedings of IEEE Lasers and Electro-Optics Society 1997 Annual Meeting (1997) PDI.2.Google Scholar
[8] Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Sugimoto, Y. and Kiyoku, H.: Appl. Phys. Lett. 69 (1996) 3034.Google Scholar
[9] Bulman, G. E., Doverspike, K., Sheppard, S. T., Weeks, T. W., Kong, H. S., Dieringer, H. M., Edmond, J. A., Brown, J. D., Swindell, J. T. and Schetzina, J. F.: Electron. Lett. 33 (1997) 556.Google Scholar
[10] Kuramata, A., Domen, K., Soejima, R., Horino, K., Kubota, S., and Tanahashi, T.: Jpn. J. Appl. Phys 36 (1997) L1130.Google Scholar
[11] Kuramata, A., Domen, K., Soejima, R., Horino, K., Kubota, S., and Tanahashi, T.: Proceedings of The Second International Conference on Nitride Semiconductors (1997) p. 450.Google Scholar
[12] Edmond, J., Bulman, G., Kong, H.S., Leonard, M., Doverspike, K., Weeks, W., Niccum, J., Sheppard, S., Negley, G., and Slater, D.: Proceedings of The Second International Conference on Nitride Semiconductors (1997) p. 448.Google Scholar
[13] Sasaki, T. and Matsuoka, T.: J. Appl. Phys 64 (1988) 4531.Google Scholar
[14] Weeks, T. W. Jr,. Bremser, M. D., Ailey, K. S., Carlson, E., Perry, W. G. and Davis, R. F.: Appl. Phys. Lett. 67 (1995) 401.Google Scholar
[15] Chien, F. R., Ning, X. J., Stemmer, S., Pirouz, P., Bremser, M. D. and Davis, R. F.: Appl. Phys. Lett. 68 (1996) 2678.Google Scholar
[16] Shan, W., Fischer, A. J., Song, J. J., Bulman, G. E., Kong, H. S., Leonard, M. T., Perry, W. G., Bremser, M. D. and Davis, R. F.: Appl. Phys. Lett. 69 (1996) 740.Google Scholar
[17] Bremser, M. D., Perry, W. G., Edwards, N. V., Zheleva, T., Parkh, N., Aspnes, D. E. and Davis, R. F.: Mat. Res. Soc. Symp. Proc. 395 (1996) 195.Google Scholar
[18] Kuga, Y., Shirai, T., Haruyama, M., Kawanishi, H. and Suematsu, Y.: Jpn. J. Appl. Phys. 34 (1995) 4085.Google Scholar
[19] Ishibashi, A., Takeishi, H., Uemura, N., Kume, M. and Ban, Y.: Extended Abstract of the 1996 International Conference on Solid State Devices and Materials (1996) p. 79.Google Scholar
[20] Horino, K., Kuramata, A., Domen, K., Soejima, R., and Tanahashi, T.: Proceedings of the International Symposium on Blue Laser and Light Emitting Diodes (1996) p. 530 Google Scholar
[21] Kuramata, A., Horino, K., Domen, K., Soejima, R., Sudo, H., and Tanahashi, T.: Proceedings of the International Symposium on Blue Laser and Light Emitting Diodes (1996) p. 80 Google Scholar
[22] Horino, K., Kuramata, A. and Tanahashi, T.: Mat. Res. Soc. Symp. Proc. 449 (1997) 73.Google Scholar

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

InGaN Laser Diodes Grown on SiC Substrate Using Low-Pressure Metal-Organic Vapor Phase Epitaxy
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

InGaN Laser Diodes Grown on SiC Substrate Using Low-Pressure Metal-Organic Vapor Phase Epitaxy
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

InGaN Laser Diodes Grown on SiC Substrate Using Low-Pressure Metal-Organic Vapor Phase Epitaxy
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *