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Infrared Sensor For CVD Deposition Of Dielectric Films

Published online by Cambridge University Press:  15 February 2011

Thomas M. Niemczyk
Affiliation:
Department of Chemistry, University of New Mexico, Albuquerque, NM 87131
James E. Franke
Affiliation:
Department of Chemistry, University of New Mexico, Albuquerque, NM 87131
Songbiao Zhang
Affiliation:
Department of Chemistry, University of New Mexico, Albuquerque, NM 87131
David M. Haaland
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-0343
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Abstract

Infrared emission (IRE) spectra were obtained from two borophosphosilicate glass (BPSG) thin-film sample sets. The first set consisted of 21 films deposited on undoped silicon wafers, and the second set consisted of 9 films deposited on patterned and doped (product) wafers. The IRE data were empirically modeled using partial least-squares calibration to simultaneously quantify four BPSG thin-film properties. The standard errors of the determinations when modeling the 21 monitor wafers were < 0.1 wt% for boron and phosphorus content, 36 Å for film thickness, and 1.9°C for temperature. The standard errors of the determinations based on the product wafers were 0.13 wt% each for B and P content, 120 Å for film thickness, and 5.9°C for temperature.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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References

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