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Influence of Traps on Carrier Concentration Profiles Measured by Capacitance-Voltage and Drive Level Profiling in CIGSe-based Heterojunctions

Published online by Cambridge University Press:  01 February 2011

P. Zabierowskia ,
M. Ćwila  and
M. Edoffb
P. Zabierowskia
Affiliation:
Faculty of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland
M. Ćwila
Affiliation:
Faculty of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland
M. Edoffb
Affiliation:
Angström Solar Center, Uppsala University, P.O. Box 534, SE-75121, Uppsala, Sweden
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Abstract

Detailed analysis of drive level capacitance, capacitance voltage characteristics and capacitance transient was carried out to elucidate the influence of N1 defects on carrier concentration profiles. The type of hysteresis observed in CV curves proves that N1 traps originate from close-to-interface minority carrier traps. We show that in the presence of these states one must be careful while interpreting DLCP data. It was found that due to the incomplete charging of N1 defects, low frequency drive level profiles may give erroneous defects densities.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 865: Symposium F – Thin-Film Compound Semiconductor Photovoltaics , 2005 , F12.3
Copyright
Copyright © Materials Research Society 2005

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