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Influence of Ti Sources on Properties of (Ba,Sr)TiO3 Films Prepared by Liquid Source CVD

Published online by Cambridge University Press:  15 February 2011

T. Kawahara
Affiliation:
Semiconductor Research Laboratory, Mitsubishi Electric Corporation, 8–1–1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661, Japan
M. Yamamuka
Affiliation:
Semiconductor Research Laboratory, Mitsubishi Electric Corporation, 8–1–1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661, Japan
T. Makita
Affiliation:
Semiconductor Research Laboratory, Mitsubishi Electric Corporation, 8–1–1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661, Japan
A. Yuuki
Affiliation:
Semiconductor Research Laboratory, Mitsubishi Electric Corporation, 8–1–1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661, Japan
N. Mikami
Affiliation:
Semiconductor Research Laboratory, Mitsubishi Electric Corporation, 8–1–1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661, Japan
K. Ono
Affiliation:
Semiconductor Research Laboratory, Mitsubishi Electric Corporation, 8–1–1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661, Japan
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Abstract

We have investigated influences of Ti sources on properties of (Ba,Sr)TiO3 [BST] films prepared on Pt/SiO2/Si substrates by liquid source chemical vapor deposition (liquid source CVD): TiO(DPM)2 [titanyl bis (dipivaloylmethanato), TiO(C11 H19O2)2], Ti(O-i-Pr)2 (DPM)2 [bis (isopropoxy) bis (dipivaloylmethanato) titanium, Ti(o-i-C3H7)2(C11H19O2)2], and TTIP [titanium tetraisopropoxide, Ti(O-i-C3H7)4]. Improved electrical properties and step coverage were obtained using TiO(DPM)2 at a substrate temperature TS=420'C and a reactor pressure P=1.5Torr as follows: a dielectric constant ε=210, equivalent SiO2 thickness teq=0.51nm, leakage current density J L=6.6×10∼−8A/cm2 at +1.1V, dielectric loss tan δ=0.007, and coverage of 0.8. However, hillocks appeared on the BST film surface under these conditions, while the film surfaces were relatively smooth using TTIP. The density of these hillocks appeared to be related to the BST(110) peak intensity of the X-ray diffraction pattern.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

1. Ohno, Y., Horikawa, T., Shinkawata, H., Kashihara, K., Kuroiwa, T., Okudaira, T., Hashizume, Y., Fukumoto, K., Eimori, T., Shibano, T., Arimoto, K., Itoh, H., Nishimura, T. and Miyoshi, H.: 7994 Symp. on VLSI Tech. Dig. (1994) 149.Google Scholar
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