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The Influence of the Void Structure on Deuterium Diffusion in a-Si:H

Published online by Cambridge University Press:  21 February 2011

M. J. Van Den Boogaard ,
S. J. Jones ,
Y. Chen ,
D. L. Williamson ,
R. A. Hakvoort ,
A. Van Veen ,
A. C. Van Der Steege ,
W. M. Arnold Bik ,
W. G. J. H. M. Van Sark  and
W. F. Van Der Weg
M. J. Van Den Boogaard
Affiliation:
Dept. of Physics, Colorado School of Mines, Golden, CO 80401, U.S.A. permanent address: Department of Atomic and Interface Physics, Debye Institute, Utrecht University, P.O. Box 80.000, NL-3508 TA Utrecht, the Netherlands
S. J. Jones
Affiliation:
Dept. of Physics, Colorado School of Mines, Golden, CO 80401, U.S.A.
Y. Chen
Affiliation:
Dept. of Physics, Colorado School of Mines, Golden, CO 80401, U.S.A.
D. L. Williamson
Affiliation:
Dept. of Physics, Colorado School of Mines, Golden, CO 80401, U.S.A.
R. A. Hakvoort
Affiliation:
Interfaculty Reactor Institute, Delft University of Technology, Mekelweg 15, NL-2629 JB Delft, the Netherlands
A. Van Veen
Affiliation:
Interfaculty Reactor Institute, Delft University of Technology, Mekelweg 15, NL-2629 JB Delft, the Netherlands
A. C. Van Der Steege
Affiliation:
Department of Atomic and Interface Physics, Debye Institute, Utrecht University, P.O. Box 80.000, NL-3508 TA Utrecht, the Netherlands
W. M. Arnold Bik
Affiliation:
Department of Atomic and Interface Physics, Debye Institute, Utrecht University, P.O. Box 80.000, NL-3508 TA Utrecht, the Netherlands
W. G. J. H. M. Van Sark
Affiliation:
Department of Atomic and Interface Physics, Debye Institute, Utrecht University, P.O. Box 80.000, NL-3508 TA Utrecht, the Netherlands
W. F. Van Der Weg
Affiliation:
Department of Atomic and Interface Physics, Debye Institute, Utrecht University, P.O. Box 80.000, NL-3508 TA Utrecht, the Netherlands
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Abstract

We have used small-angle X-ray scattering (SAXS) and Doppler-broadening measurements of positron-annihilation radiation to study changes in the microvoid distribution in PECVD a-Si:H films during annealing. From a comparison of data on deuterium diffusion with information obtained from SAXS we conclude that changes, during annealing, in the dispersive character of deuterium diffusion are likely to be caused by void formation through clustering of smaller structural defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 407
Copyright
Copyright © Materials Research Society 1992

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References

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