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The influence of the sapphire substrate on the temperature dependence of the GaN bandgap

Published online by Cambridge University Press:  10 February 2011

Joachim Krüiger
Affiliation:
Department of Materials Science, University of California at Berkeley and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
Noad Shapiro
Affiliation:
Department of Materials Science, University of California at Berkeley and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
Sudhir Subramanya
Affiliation:
Department of Materials Science, University of California at Berkeley and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
Yihwan Kim
Affiliation:
Department of Materials Science, University of California at Berkeley and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
Henrik Siegle
Affiliation:
Department of Materials Science, University of California at Berkeley and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
Piotr Perlin
Affiliation:
Department of Materials Science, University of California at Berkeley and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
Eicke R. Weber
Affiliation:
Department of Materials Science, University of California at Berkeley and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
William S. Wong
Affiliation:
Department of Materials Science, University of California at Berkeley Berkeley, California 94720, USA
Timothy Sands
Affiliation:
Department of Materials Science, University of California at Berkeley Berkeley, California 94720, USA
Nathan W. Cheung
Affiliation:
Department of Electrical Engineering and Computer Science, University of California, Berkeley, California 94720, USA
Richard J. Molnar
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173, USA
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Abstract

This paper analyses the influence of the sapphire substrate on stress in GaN epilayers in the temperature range between 4K and 600K. Removal of the substrate by a laser assisted liftoff technique allows, for the first time, to distinguish between stress and other material specific temperature dependencies. In contrast to the prevailing assumption in the literature, that the difference in the thermal expansion coefficients is the main cause for stress it is found that the substrate has a rather small influence in the examined temperature range. The measured temperature dependence of stress is in contradiction to the published values for the thermal expansion coefficients for sapphire and GaN.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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The influence of the sapphire substrate on the temperature dependence of the GaN bandgap
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