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Influence of Process Parameters on Resistive Switching in MOCVD NiO Films

Published online by Cambridge University Press:  27 July 2011

X.P. Wang
Affiliation:
IMEC, Kapeldreef 74, B-3001 Leuven, Belgium
D.J. Wouters
Affiliation:
IMEC, Kapeldreef 74, B-3001 Leuven, Belgium Department of Electrical Engineering (ESAT), Katholieke Universiteit Leuven, B-3001 Leuven, Belgium
M. Toeller
Affiliation:
Tokyo Electron Limited, Akasaka Biz Tower, 3-1 Akasaka 5-chome, Minato-ku, Tokyo 107-6325 Japan
J. Meersschaut
Affiliation:
IMEC, Kapeldreef 74, B-3001 Leuven, Belgium
L. Goux
Affiliation:
IMEC, Kapeldreef 74, B-3001 Leuven, Belgium
Y.Y. Chen
Affiliation:
Department of Electrical Engineering (ESAT), Katholieke Universiteit Leuven, B-3001 Leuven, Belgium
B. Govoreanu
Affiliation:
IMEC, Kapeldreef 74, B-3001 Leuven, Belgium
L. Pantisano
Affiliation:
IMEC, Kapeldreef 74, B-3001 Leuven, Belgium
R. Degraeve
Affiliation:
IMEC, Kapeldreef 74, B-3001 Leuven, Belgium
M. Jurczak
Affiliation:
IMEC, Kapeldreef 74, B-3001 Leuven, Belgium
L. Altimime
Affiliation:
IMEC, Kapeldreef 74, B-3001 Leuven, Belgium
J. Kittl
Affiliation:
IMEC, Kapeldreef 74, B-3001 Leuven, Belgium
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Abstract

The unipolar resisitive switching properties of MOCVD deposited NiO in Ni/NiO/TiN stacks is reported. The switching quality is defined as function of RESET current and Roff/Ron ratio, and the importance of the Forming current and voltage on these parameters is discussed. The effect of structural stack variations as NiO thickness, Ti doping, and TiN thickness on the switching behavior of NiO is explained by the effect on the forming current and voltage conditions, and on Joule heating dissipation. Thinner NiO films, Ti doping, as well as thicker top electrode improve the switching quality by decreasing the RESET current and increasing the Roff/Ron ratio.

Type
Research Article
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

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