We report on the growth and properties of a-(Si,Ge):H films and p-i-n solar cell devices prepared using a remote, low pressure ECR plasma deposition technique. The films and devices were prepared using either He or H2 as the diluent gas. The plasma conditions were controlled so as to induce significant ion bombardment during growth. We find that there is a dramatic influence of plasma chemistry on the growth and properties of a-(Si,Ge):H films and devices. In particular, with hydrogen as the diluent gas, changing the pressure in the reactor dramatically changes both the Germanium incorporation in the film, and the electronic properties. Lower pressures lead to less Ge being incorporated, and higher mobility-lifetime product for holes for a given Tauc gap, as well as better p-i-n devices. In contrast, changing the pressure when He is the diluent gas does not produce such large changes. We speculate that the changes in device and film properties are due to the influence of ion bombardment on growth chemistry, and that both efficient energy and momentum transfer to the growing surface are necessary to achieve the best devices. The differences between He and hydrogen may simply be due to the fact that He plasma is much more energetic than a comparable hydrogen plasma, and there is more efficient momentum transfer when He is used as compared to when hydrogen is used. We have also produced very good single junction a-(Si,Ge) devices using the ECR technique.