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The Influence of Doping on the Etching of Si(111)

Published online by Cambridge University Press:  28 February 2011

Harold F. Winters  and
D. Haarer
Harold F. Winters
Affiliation:
IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120-6099
D. Haarer
Affiliation:
Universitaet Bayreuth, Lehrstuhl fuer Experimentalphysik IV, Postfach 3008, D-8580 Bayreuth, F.R.G.
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Abstract

It has been recognized for some time that the doping level in silicon influences etch rate in plasma environments[1–8]. We have now been able to reproduce and investigate these doping effects in a modulated-beam, mass spectrometer system described previously [9] using XeF2 as the etchant gas. The phenomena which have been observed in plasma reactors containing fluorine atoms are also observed in our experiments. The data has led to a model which explains the major trends.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 75: Symposium B – Photon, Beam, and Plasma Stimulated Chemical Processes at Surfaces , 1986 , 443
Copyright
Copyright © Materials Research Society 1987

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