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In Situ Ellipsometric Observation of the Growth of Crystalline Silicon From Fluorinated Precursors

Published online by Cambridge University Press:  01 January 1993

Tetsuya Akasaka ,
Yuhzo Araki  and
Isamu Shimizu
Tetsuya Akasaka
Affiliation:
The Graduate School at Nagatsuta, Tokyo Institute of Technology,, 4259 Nagatsuta, Midoriku, Yokohama-city, Japan 227
Yuhzo Araki
Affiliation:
The Graduate School at Nagatsuta, Tokyo Institute of Technology,, 4259 Nagatsuta, Midoriku, Yokohama-city, Japan 227
Isamu Shimizu
Affiliation:
The Graduate School at Nagatsuta, Tokyo Institute of Technology,, 4259 Nagatsuta, Midoriku, Yokohama-city, Japan 227
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Abstract

The growth of polycrystalline silicon thin films fabricated from fluorinated precursors SiFnHm (n+m≤3) on SiO 2 substrates was examined in detail by real time ellipsometry. The volume fraction of crystal in the film was within 50 vol.% on the average when it was grown continuously on glass. A low density amorphous layer of 300Å thick was formed in the early stage of the growth. The crystallinity, however, was improved with an increase in accumulated film thickness. The layer-by-layer technique of alternating the deposition of very thin film and the exposure to hydrogen plasma was effective on the promotion of crystallization. Optimal conditions of both the deposition and hydrogen plasma treatments were also established by in situ ellipsometry.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 19
Copyright
Copyright © Material Research Society 1993

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References

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