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Improvement of Threshold Voltage Degradation Characteristics of a-Si:H TFT by Pre-Electrical Bias-Aging for Amoled Display

Published online by Cambridge University Press:  01 February 2011

Jae-Hoon Lee
Affiliation:
jhlee@emlab.snu.ac.kr, Seoul National Univ., School of Electrical Engineering, School of Electrical Engineering,Seoul National Univ. #050,San 56-1, Shillim-dong, Kwanak-ku, Seoul, Seoul, Seoul, 151-742, Korea, Republic of, +82-2-880-7992, +82-2-871-7992
Sang-Geun Park
Affiliation:
psg97@emlab.snu.ac.kr, Seoul National Univ., School of Electrical Engineering, #050, San 56-1, Shillim-dong, Kwanak-Ku, Seoul, 151-742, Korea, Republic of
Kwang-Sub Shin
Affiliation:
luke@emlab.snu.ac.kr, Seoul National Univ., School of Electrical Engineering, #050, San 56-1, Shillim-dong, Kwanak-Ku, Seoul, 151-742, Korea, Republic of
Min-Koo Han
Affiliation:
mkh@snu.ac.kr, Seoul National Univ., School of Electrical Engineering, #050, San 56-1, Shillim-dong, Kwanak-Ku, Seoul, 151-742, Korea, Republic of
Joon-Chul Goh
Affiliation:
joonchul.goh@samsung.com, SAMSUNG ELECTRONICS CO.,LTD, San #24 Nongseo-Dong, Giheungp-Gu, Yongin-City, Gyeonggi-Do, 449-711, Korea, Republic of
Jong-Moo Huh
Affiliation:
jm.huh@samsung.com, SAMSUNG ELECTRONICS CO.,LTD, San #24 Nongseo-Dong, Giheungp-Gu, Yongin-City, Gyeonggi-Do, 449-711, Korea, Republic of
Joonhoo Choi
Affiliation:
jhoo.choi@samsung.com, SAMSUNG ELECTRONICS CO.,LTD, San #24 Nongseo-Dong, Giheungp-Gu, Yongin-City, Gyeonggi-Do, 449-711, Korea, Republic of
Kyuha Chung
Affiliation:
kyuha.chung@samsung.com, SAMSUNG ELECTRONICS CO.,LTD, San #24 Nongseo-Dong, Giheungp-Gu, Yongin-City, Gyeonggi-Do, 449-711, Korea, Republic of
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Abstract

We propose a pre-electrical bias aging to reduce threshold voltage (Vth) shift of hydrogenated- amorphous silicon thin-film transistor (a-Si:H TFT) for AMOLED display. The quantity of Vth shift in the sample subjected to a bias-aging is reduced due to the reduction of created dangling bond density, compared with a sample without a bias-aging. When an identical stress duration of 50,000 sec is applied to a-Si:H TFT with or without a pre-electrical bias-aging, the created dangling bond density (ΔNDB) after a pre-electrical bias-aging is decreased from 1.38 × 1011/cm2 to 0.685 × 1011/cm2. Our experimental results indicate that after the pre-electrical bias aging, a newly created dangling bond during an electrical stress is decreased because a weak bond density and hydrogen diffusion may be decreased.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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References

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