Hostname: page-component-84b7d79bbc-tsvsl Total loading time: 0 Render date: 2024-07-30T03:08:42.694Z Has data issue: false hasContentIssue false
  • English
  • Français

Improvement of the Structural Quality of GaAs Layers Grown on Si with LT-GaAs Intermediate Layer

Published online by Cambridge University Press:  22 February 2011

Zuzanna Liliental Weber ,
H. Fujioka ,
H. Sohn  and
E.R. Weber
Zuzanna Liliental Weber
Affiliation:
Center for Advanced Materials, Lawrence Berkeley Laboratory 62/203, University of California, Berkeley, CA 94720, Department of Materials Science, University of California, Berkeley, CA 94720
Get access

Abstract

Superior electrical and optical quality of GaAs grown on Si with an inserted low-temperature (LT)-GaAs buffer-layer was demonstrated. Photoluminescence intensity was increasing and leakage current of Schottky diodes build on such a structure was decreasing by few orders of magnitude. These observations were correlated with structural studies employing classical and high-resolution transmission electron microscopy (TEM). Bending of the threading dislocations and their interaction was observed at the interface between a cap GaAs layer and the LT-GaAs layer. This dislocation interaction results in the reduction of dislocation density by at least one order of magnitude or more compared for the GaAs layers with the same thickness grown on Si. The surface morphology of the cap GaAs layer is improving as well.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 325: Symposium L – Physics and Applications of Defects in Advanced Semiconductors , 1993 , 377
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Akiyama, M., Kawarada, Y., and Kaminishi, K., Jpn. J. Appl. Phys. 23, L843 (1984).Google Scholar
2. Soga, T., Hattori, S., Sakai, S., Takeyasu, M., and Umeno, M., Electron. Lett. 20, 916 (1984).Google Scholar
3. Chand, N., People, R., Baiocchi, F.A., Wecht, K.W., and Cho, A.Y., Appl. Phys. Lett. 48, 1815 (1986).Google Scholar
4. Fujioka, H., Sohn, H., Weber, E.R., Verma, A., J. Elect.Mat. (1993) in print.Google Scholar
5. Smith, F.W., Calawa, A.R., Chen, C.I., and Mahoney, M.J., IEEE Electron Device Lett. 9,77 (1988).Google Scholar
6. Kaminska, Maria, Weber, E.R., Liliental-Weber, Z., and Leon, R., Jour. Vac. Sci. Tech. B7, 710 (1989)Google Scholar
7. Liliental-Weber, Z., Mat. Res. Soc. Proc. vol. 241, 101 (1992).Google Scholar
8. Harrison, W.A., Kraut, E.A., Waldrop, J.R., and Grant, R.W., Phys. Rev. B18, 4402 (1978).Google Scholar
9. Liliental-Weber, Z., Mat. Res. Soc.Symp. Proc. vol. 148, (1989) p. 205.CrossRefGoogle Scholar