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Improvement of capacitance-voltage (C-V) characteristics of YSZ/Si(001) and ZrO2/Si thin film by Nb-doping

Published online by Cambridge University Press:  11 February 2011

Naoki Wakiya
Affiliation:
Department of Metallurgy and Ceramics Science, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2–12–1 O-okayama, Meguro-ku, Tokyo 152–8552, Japan
Tomohiko Moriya
Affiliation:
Department of Metallurgy and Ceramics Science, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2–12–1 O-okayama, Meguro-ku, Tokyo 152–8552, Japan
Kazuo Shinozaki
Affiliation:
Department of Metallurgy and Ceramics Science, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2–12–1 O-okayama, Meguro-ku, Tokyo 152–8552, Japan
Nobuyasu Mizutani
Affiliation:
Department of Metallurgy and Ceramics Science, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2–12–1 O-okayama, Meguro-ku, Tokyo 152–8552, Japan
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Abstract

Yttria stabilized zirconia (YSZ) and zirconia (ZrO2) thin films without and with Nb-doping were prepared on Si substrate by rf-magnetron sputtering. Undoped YSZ and ZrO2 thin films had (001) orientation, and the orientation was unchanged by the Nb-doping. For both undoped YSZ and ZrO2 thin films, around 2.0 V ion-drift type hysteresis was clearly observed in capacitance-voltage (C-V) characteristics. Nb-doping into YSZ brought about the increase of lattice parameter up to 20 mol% of Nb, which suggests that Nb was incorporated into YSZ lattice up to 20 mol%. By the Nb-doping, the hysteresis in C-V characteristics for YSZ thin film was considerable decreased to around 0.1 V. Drastic suppression of the hysteresis in C-V characteristics was observed for Nb-doped ZrO2 thin film. In this case, the hysteresis was completely disappeared. These facts suggest that oxygen vacancies in YSZ and ZrO2 thin films would be suppressed or disappeared by Nb-doping. This means that Nb is a excellent dopant for both YSZ and ZrO2 to suppress the ion-drift type hysteresis.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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Improvement of capacitance-voltage (C-V) characteristics of YSZ/Si(001) and ZrO2/Si thin film by Nb-doping
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Improvement of capacitance-voltage (C-V) characteristics of YSZ/Si(001) and ZrO2/Si thin film by Nb-doping
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