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Improved Performance of MESFET Devices with L.T.GaAs Buffer Layers

Published online by Cambridge University Press:  26 February 2011

M. Lagadas
Affiliation:
Institute of Electronic Structure and Lasers, Foundation for Research and Technology Hellas, P.O.Box 1527, 71110 Heraklion, Crete, Greece
Z. Hatzopoulos
Affiliation:
Institute of Electronic Structure and Lasers, Foundation for Research and Technology Hellas, P.O.Box 1527, 71110 Heraklion, Crete, Greece
F. Karadima
Affiliation:
Institute of Electronic Structure and Lasers, Foundation for Research and Technology Hellas, P.O.Box 1527, 71110 Heraklion, Crete, Greece
G. Konstantinidis
Affiliation:
Institute of Electronic Structure and Lasers, Foundation for Research and Technology Hellas, P.O.Box 1527, 71110 Heraklion, Crete, Greece
N. Kornilios
Affiliation:
Institute of Electronic Structure and Lasers, Foundation for Research and Technology Hellas, P.O.Box 1527, 71110 Heraklion, Crete, Greece
C. Papavasiliou
Affiliation:
Institute of Electronic Structure and Lasers, Foundation for Research and Technology Hellas, P.O.Box 1527, 71110 Heraklion, Crete, Greece
A. Christou
Affiliation:
University of Maryland, Dept. of Material Engineering, College Park, Maryland 20742, USA
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Abstract

We have investigated the electrical properties of n-GaAs epilayers grown by MBE on the top of L.T.GaAs .The Hall mobility and the channel depth of the epilayer decreases as the growth temperature of the buffer decreases. The degradation of the electrical properties is attributed to the outdiffusion of precipitates and point defects from the L.T. buffer layer. The use of intermediate layers (GaAs grown at 400°C-600°C and GaAs/AlxGa1-xAs (x=0.5, 1) superlattices ) between L.T. buffer and n-GaAs active layers in MESFET devices improves the Hall mobility of the channel, the gm and fT performance of the devices.This improvement has been attributed to the AlGaAs layer which hinders the defects outdiffusion.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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