Skip to main content Accessibility help
×
Home
Hostname: page-component-55597f9d44-vkn6t Total loading time: 0.577 Render date: 2022-08-20T03:10:02.678Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "useRatesEcommerce": false, "useNewApi": true } hasContentIssue true

Improved Dielectric Properties of Heterostructured Ba0.5Sr0.5TiO3 Thin Film Composites for Microwave Dielectric Devices

Published online by Cambridge University Press:  11 February 2011

M. Jain
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, PR-00931, USA
S. B. Majumder
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, PR-00931, USA
R. S. Katiyar
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, PR-00931, USA
A. S. Bhalla
Affiliation:
Materials Research Center, Pennsylvania State University, University Park, PA 16802, USA
D. C. Agrawal
Affiliation:
Materials Science Program, Indian Institute of Technology, Kanpur U.P., India
F. W. Van Keuls
Affiliation:
Ohio Aerospace Institute, Cleveland, OH 44142, USA
F. A. Miranda
Affiliation:
NASA, Glenn Research Center, Cleveland, OH 44135, USA
R. R. Romanofsky
Affiliation:
NASA, Glenn Research Center, Cleveland, OH 44135, USA
C. H. Mueller
Affiliation:
Analex Corporation, Cleveland, OH-44135, USA
Get access

Abstract

In the present work we have deposited MgO and Ba0.5Sr0.5TiO3 (BST50) thin layers in different sequences to make MgO:BST50 hetero-structured thin films. These films were characterized by X-ray diffraction and found to be highly (100) textured. The figure of merit {(C0-Cv)/(C0.tand)} of the hetero-structured films was found to be higher as compared to pure BST50 films measured at 1 MHz frequency with electric field of 25.3 kV/cm. These films were used to make eight element coupled micro-strip phase shifter and characterized in a frequency range of 13–15 GHz. The high frequency figure of merit (k factor, defined as the ratio of degree of phase shift per dB loss) measured at around 14 GHz with electric field of 333 kV/cm has been markedly improved (around 64.28 °/dB for hetero-structured film as compared to 24.65 °/dB for pure film). Improvement in dielectric properties in a wide frequency range in the MgO:BST are believed to be due to the higher densification of the hetero-structured films.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Babbit, R. W., Koscica, T.E., and Drach, W. C., Microwave J. 1992, 63.Google Scholar
2. Van Keuls, F.W., Mueller, C.H., Romanofsky, R.R., Warner, J.D., Miranda, F.A., Majumder, S.B., Jain, M., Martinez, A., Katiyar, R.S., Jiang, H., Integrated Ferroelectrics 42, 207 (2002).CrossRefGoogle Scholar
3. Ayguavives, F.T., Tombak, A., Maria, J.P., Stauf, G.T., Ragaglia, C., Roeder, J., Mortazawi, A., and Kingon, A.S., Proceedings of the 12th IEEE International Symposium 1, 365 (2000).Google Scholar
4. Majumder, S.B., Jain, M., Martinez, A., Katiyar, R.S., Van Keuls, F.W., and Miranda, F.A., J. Appl. Phys. 90, 896 (2001).CrossRefGoogle Scholar
5. Wu, L., Chen, Y. C., Chou, Y.P., and Tsai, Y. T., Jpn. J. Appl. Phys. 38, 5612 (1999).CrossRefGoogle Scholar
6. Sengupta, L.C. and Sengupta, S., IEEE Trans. Ultrason. Ferroelectric Freq. Control. 44, (1997) 792.CrossRefGoogle Scholar
7. Alberta, E. F., Guo, R., and Bhalla, A.S., Ferroelectrics 268, 169 (2002).CrossRefGoogle Scholar
8. Syncowcyznski, J., Sengupta, L.C., and Chiu, L.H., Integrated Ferroelectrics 22, 342 (1998).Google Scholar
9. Sengupta, L.C. and Synowcznski, J., Integrated Ferroelectrics 12, 287 (1997).CrossRefGoogle Scholar
10. Sengupta, L.C., Sengupta, S., Rees, D.A., Syncowcyznski, J., Stowell, S., NgO, E. H., Chiu, L.H., Integrated Ferroelectrics 22, 393 (1998).CrossRefGoogle Scholar
11. Rivkins, T.V., Perkins, J. D., Parilla, P.A., Ginley, D.S., Carlson, C. M., Sengupta, L. C., Chiu, L., Zhang, X., Zhu, Y., Sengupta, S., Mat. Res. Soc. Symp. Proc. 656E, DD5.7.1 (2001).Google Scholar
12. NgO, E., Joshi, P.C., Cole, M. W., and Hubbard, C. W., Appl. Phys. Lett. 79, 248 (2001).CrossRefGoogle Scholar
13. Jain, M., Majumder, S.B., Katiyar, R.S., Agrawal, D.C., Bhalla, A.S., Appl. Phys. Lett. 81, 3212 (2002).CrossRefGoogle Scholar
14. Nagai, T., Hwang, H.J., Yasuoka, M., Sando, M., and Niihara, , J. Am. Ceram. Soc. 81, 425 (1998).CrossRefGoogle Scholar
15. Joshi, P.C., Cole, M. W., Appl. Phys. Lett. 77, 289 (2000).CrossRefGoogle Scholar
16. Kishi, H., Okino, Y., Honda, M., Iguchi, Y., Imeda, M., Takahashi, Y., Ohsato, H., and Okuda, T., J. Appl. Phys. 36, 5954 (1997).CrossRefGoogle Scholar
17. Miranda, F.A., Mueller, C.H., Van Keuls, F.W., and Romanofsky, R.R.. Mat. Res. Soc. Proc. 656, DD1.3.1 (2001).Google Scholar
18. Majumder, S.B., Jain, M., Martinez, A., Katiyar, R.S., Fachini, E.R., Van Keuls, F.W., Miranda, F.A., Sahoo, P.K., and Kulkarni, V. N., Mat. Res. Soc. Proc. 688, C.7.8.1 (2002).CrossRefGoogle Scholar

Save article to Kindle

To save this article to your Kindle, first ensure coreplatform@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about saving to your Kindle.

Note you can select to save to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be saved to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Improved Dielectric Properties of Heterostructured Ba0.5Sr0.5TiO3 Thin Film Composites for Microwave Dielectric Devices
Available formats
×

Save article to Dropbox

To save this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you used this feature, you will be asked to authorise Cambridge Core to connect with your Dropbox account. Find out more about saving content to Dropbox.

Improved Dielectric Properties of Heterostructured Ba0.5Sr0.5TiO3 Thin Film Composites for Microwave Dielectric Devices
Available formats
×

Save article to Google Drive

To save this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you used this feature, you will be asked to authorise Cambridge Core to connect with your Google Drive account. Find out more about saving content to Google Drive.

Improved Dielectric Properties of Heterostructured Ba0.5Sr0.5TiO3 Thin Film Composites for Microwave Dielectric Devices
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *