Skip to main content Accessibility help
×
Home
Hostname: page-component-684899dbb8-c97xr Total loading time: 0.213 Render date: 2022-05-27T19:51:45.015Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "useRatesEcommerce": false, "useNewApi": true }

III-Nitride Growth on Lithium Niobate: A New Substrate Material for Polarity Engineering in III-Nitride Heteroepitaxy

Published online by Cambridge University Press:  11 February 2011

W. Alan Doolittle
Affiliation:
Crystal Technology, Inc., Palo Alto, CA, USA
Gon Namkoong
Affiliation:
Georgia Institute of Technology, School of Electrical and Computer Engineering, 777 Atlantic Dr., Atlanta, GA 30332–0269, USA, alan.doolittle@ece.gatech.edu
Alexander Carver
Affiliation:
Georgia Institute of Technology, School of Electrical and Computer Engineering, 777 Atlantic Dr., Atlanta, GA 30332–0269, USA, alan.doolittle@ece.gatech.edu
Walter Henderson
Affiliation:
Georgia Institute of Technology, School of Electrical and Computer Engineering, 777 Atlantic Dr., Atlanta, GA 30332–0269, USA, alan.doolittle@ece.gatech.edu
Dieter Jundt
Affiliation:
Duke University, Durham, NC, USA
April S. Brown
Affiliation:
Duke University, Durham, NC, USA
Get access

Abstract

Herein, we discuss the use of a novel new substrate for III-Nitride epitaxy, Lithium Niobate. It is shown that Lithium Niobate (LN) has a smaller lattice mismatch to III-Nitrides than sapphire and can be used to control the polarity of III-Nitride films grown by plasma assisted molecular beam epitaxy. Results from initial growth studies are reported including using various nitridation/buffer conditions along with structural and optical characterization. Comparisons of data obtained from GaN and AlN buffer layers are offered and details of the film adhesion dependence on buffer layer conditions is presented. Lateral polarization heterostructures grown on periodically poled LN are also demonstrated. While work is still required to establish the limits of the methods proposed herein, these initial studies offer the promise for mixing III-Nitride semiconductor materials with lithium niobate allowing wide bandgap semiconductors to utilize the acoustic, pyroelectric/ferroelectric, electro-optic, and nonlinear optical properties of this new substrate material as well as the ability to engineer various polarization structures for future devices.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Crystal Technologies Web Page, www.crystaltechnology.com Google Scholar
2 Powell, R. G., Lee, N.-E., Kim, Y.-W., and Greene, J. E.,, J. Appl. Phys. 73, 189 (1993)CrossRefGoogle Scholar
3 Commercial crystal modeling program, Diamond™ version 2.1e, copyright 1996–2001 Crystal Impact GbR, Author Klaus BrandenburgGoogle Scholar
4 Lithium triniobate X-ray card 36–0307 from International Centre for Diffraction Data (ICDD) 1997 JCPDSGoogle Scholar
5 Prokhorov, A. M. and Kuz'minov, Y. S., Physics and Chemistry of crystalline lithium niobate, Adam Hilger/IOP Publishing, New York, (1990)Google Scholar
6 Doolittle, W. A., Brown, A. S., Kang, S., Seo, S. W., Huang, S., Jokerst, N. M., Phys. Stat. Sol. (a), vol. 188, no. 2 p. 491–5, 23 Nov. (2001)3.0.CO;2-B>CrossRefGoogle Scholar
7 Visconti, P., Huang, D., Reshchikov, M. A., Yun, F., King, T., Baski, A. A., Cingolani, R., Litton, C. W., Jasinski, J., Liliental-Weber, Z., and Morkoc, H., Phys. Stat. Sol.(b) 228, 513. (2001)3.0.CO;2-Y>CrossRefGoogle Scholar
8 Doolittle, W. A., Kropenwicki, T., Carter-Coman, C., Stock, S., Kohl, P., Jokerst, N. M., Metzger, R. A., Kang, S., Lee, K., May, G., and Brown, A. S., J. Vac. Sci. & Tech. B, Vol. 16, No. 3, pp. 13001304, May/June, (1998)CrossRefGoogle Scholar
9 Stutzmann, M., Ambacher, O., Eickhoff, M., Karrier, U., Pimenta, A. Lima, Neuberger, R., Schalwig, J., Dimitrov, R., Schuck, P. J., and Grober, R. D., Phys. stat. sol. (b), 228, No 2, p. 505512, (2001).3.0.CO;2-U>CrossRefGoogle Scholar

Save article to Kindle

To save this article to your Kindle, first ensure coreplatform@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about saving to your Kindle.

Note you can select to save to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be saved to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

III-Nitride Growth on Lithium Niobate: A New Substrate Material for Polarity Engineering in III-Nitride Heteroepitaxy
Available formats
×

Save article to Dropbox

To save this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you used this feature, you will be asked to authorise Cambridge Core to connect with your Dropbox account. Find out more about saving content to Dropbox.

III-Nitride Growth on Lithium Niobate: A New Substrate Material for Polarity Engineering in III-Nitride Heteroepitaxy
Available formats
×

Save article to Google Drive

To save this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you used this feature, you will be asked to authorise Cambridge Core to connect with your Google Drive account. Find out more about saving content to Google Drive.

III-Nitride Growth on Lithium Niobate: A New Substrate Material for Polarity Engineering in III-Nitride Heteroepitaxy
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *