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Hydrogen Incorporation in MPCVD Nanocrystalline Diamond Films During the Deposition Process

Published online by Cambridge University Press:  31 January 2011

Dominique Ballutaud
Marie-Amandine Pinault
Affiliation:, CNRS, GEMaC, Meudon, France
François Jomard
Affiliation:, CNRS, GEMaC, Meudon, France
Alain Lusson
Affiliation:, CNRS, GEMaC, Meudon, France
Samuel Saada
Affiliation:, CEA, LIST, Gif-sur-Yvette, France
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Hydrogen incorporation is studied in two Microwave Plasma CVD nanocrystalline diamond films deposited with prolongated BIAS or not during the growth step. The hydrogen content and bonding forms are analysed by Secondary Ion Mass Spectrometry, Raman and Fourier Transformer Infrared Spectroscopy. Our results show a high hydrogen concentration up to 3.1021 cm-1, as expected in nanocrystalline diamond, and in good agreement with the sp2 phase rate measured by Raman spectroscopy . The FTIR spectra exhibit two sharp peaks at 2850 and 2920 cm-1 and show that a fraction of hydrogen is bonded to sp3 CH2 groups. Hydrogen desorption experiments are performed to analyse the local structure modification of the diamond films.

Research Article
Copyright © Materials Research Society 2010

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1 Ballutaud, D., Kociniewski, T., Vigneron, J., Simon, N. and Girard, H., Diamond and Relat. Mater. 17, 1127 (2008).Google Scholar
2 Barros, M. I. De, Serin, V., Vandenbucke, L., Botton, G., Andreazza, P. and Phaneufe, M. W., Diamond and Relat. Mater. 11, 1544 (2002).Google Scholar
3 Blumenau, A. T., Heggie, M. I., Fall, C. J., Jones, R., Frauenheim, T., Phys. Rev. B 65, 205205 (2002).Google Scholar
4 Goss, J. P., Jones, R., Heggie, M. I., Ewels, C. P., Briddon, P. R. and Öberg, S., Phys. Rev. B 65, 115207 (2002).Google Scholar
5 Ballutaud, D., Laroche, J.-M., Simon, N., Girard, H., Herlem, M., Mat. Res. Soc. Symp. Proc. 813, 105 (2004).Google Scholar
6 Ballutaud, D., Jomard, F., Theys, B., Mer, C., Tromson, D. and Bergonzo, P., Diamond and Relat. Mater. 10, 405 (2001).Google Scholar
7 Saada, S., Arnault, J.-C., Rocha, L., Bazin, B. and Bergonzo, P., Phys. Stat. Sol. (a) 9, 2121 (2008).Google Scholar
8 Ferrari, A. C. and Robertson, J., Phys. Rev. B 61, 14095 (2000).Google Scholar
9 Michaelson, S., Lifshitz, Y., Ternyak, O., Akhvlediani, R., and Hoffman, A., Diamond and Relat. Mater. 16, 845 (2007).Google Scholar
10 Ferrari, A. C. and Robertson, J., Phys. Rev. B 63, 121405 (2001).Google Scholar
11 Tang, C. J., Neves, A. J. and Fernandes, A. J. S., Diamond and Relat. Mater. 11, 527 (2002).Google Scholar
12 Tang, C. J., Neves, A. J. and Fernandes, A. J. S., Diamond and Relat. Mater. 12, 1488 (2003).Google Scholar