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Hydrogen Content and the Optical Bandgap in Amorphous Silicon

Published online by Cambridge University Press:  26 February 2011

K. M. H. Maessen
Affiliation:
Department of At.omic and Interface Physics, University of Utrecht, P.O. Box 80.000, 3508 TA Utrecht, the Netherlands.
M. J. M. Pruppers
Affiliation:
Department of At.omic and Interface Physics, University of Utrecht, P.O. Box 80.000, 3508 TA Utrecht, the Netherlands.
J. Bezemer
Affiliation:
Department of At.omic and Interface Physics, University of Utrecht, P.O. Box 80.000, 3508 TA Utrecht, the Netherlands.
F. H. P. M. Habraken
Affiliation:
Department of At.omic and Interface Physics, University of Utrecht, P.O. Box 80.000, 3508 TA Utrecht, the Netherlands.
W. F. van der Weg
Affiliation:
Department of At.omic and Interface Physics, University of Utrecht, P.O. Box 80.000, 3508 TA Utrecht, the Netherlands.
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Abstract

The dependence of the optical bandgap on the hydrogen concentration is measured for amorphous silicon films prepared under different glow-discharge conditions. A deviation from the usually accepted linear dependence is found for hydrogen concentrations above 12 at.‰ We find that in this concentration region an increase of hydrogen incorporated as SiH2 is responsible for this behaviour.

Type
Research Article
Copyright
Copyright © Materials Research Society 1987

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References

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4. Ley, L., in Hydrogenated amorphous silicon, Vol 2, ed. Joannopoulos, J.D. and Lukovsky, G. (Springer, Berlin 1984).Google Scholar
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6. Papaconstantopoulos, D.A., Economou, E.N., Phys. Rev. B24 7233 (1981).CrossRefGoogle Scholar

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