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Homoepitaxial and Heteroepitaxial Growth of Sr0.61Ba0.39Nb2O6 Thin Films by Pulsed Laser Deposition

Published online by Cambridge University Press:  15 February 2011

J. S. Yeo ,
K. E. Youden ,
T. F. Huang ,
L. Hesselink  and
J. S. Harris Jr.
J. S. Yeo
Affiliation:
Center for Nonlinear Optical Materials, Stanford University, Stanford, CA 94305
K. E. Youden
Affiliation:
New Focus, Inc., 2630 Walsh Avenue, Santa Clara, CA 95051-0905
T. F. Huang
Affiliation:
Center for Nonlinear Optical Materials, Stanford University, Stanford, CA 94305
L. Hesselink
Affiliation:
Center for Nonlinear Optical Materials, Stanford University, Stanford, CA 94305
J. S. Harris Jr.
Affiliation:
Center for Nonlinear Optical Materials, Stanford University, Stanford, CA 94305
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Abstract

Epitaxial SBN:61 films have been grown on SBN:75 and MgO substrates by pulsed laser deposition. The optical loss due to absorption is greatly reduced by increasing the oxygen pressure to 1 mbar during the cooling process. In homoepitaxy, X-ray phi scans on the (221) plane of the SBN:61 films indicate that the in-plane grains are rotated 0° or ±28° with respect to single crystalline SBN:75 substrates. Cross-section and plane view high resolution TEM reveals this crystalline relations and microstructure of SBN thin films. Pr doped SBN:61 thin films show sharp transition band at 495 nm and 607 nm in room temperature photoluminescence measurement.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 401: Symposium G – Epitaxial Oxide Thin Films II , 1995 , 225
Copyright
Copyright © Materials Research Society 1996

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