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A Historical View of the Role of Ion-Implantation Defects in PN Junction Formation for Devices

Published online by Cambridge University Press:  17 March 2011

R.B. Fair
R.B. Fair*
Affiliation:
ECE Department, Duke University Durham, NC 27708rfair@ee.duke.edu
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Abstract

The early use of ion bombardment of semiconductors for forming doped regions was viewed as a room-temperature process by solid-state scientists. Many interesting, but relatively useless devices were made by implanting species such as Na and Cs ions to form pn junctions from radiation damage or interstitial impurities. The revolutionary idea that one could implant Group III and V dopants into semiconductors and then heat the implanted substrate to above 800C didn't appear until 10 years after Shockley's 1954 patent. At that time, implantation damage became relatively unimportant as processes evolved with high temperature, long time diffusions. With the advent of rapid thermal processing, the attention shifted back to implantation-induced defects to explain transient-enhanced-diffusion effects. Today's challenges in forming ultra-shallow junctions by ion-implantation are in controlling and minimizing the damage structures that dominate junction activation and diffusion. Low-energy implants have been effective in this regard.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 610: Symposium B – Si Front End Processing - Physics & Technology..II , 2000 , B4.1
Copyright
Copyright © Materials Research Society 2000

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