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High-Voltage Operation of Surface Barrier Silicon Detectors With a Side Groove

Published online by Cambridge University Press:  15 February 2011

S. Ohkawa ,
K. Husimi ,
C. Kim ,
Y. Kim  and
D. Itoh
S. Ohkawa
Affiliation:
Institute for Nuclear Study, University of Tokyo, Tanashi, Tokyo, Japan
K. Husimi
Affiliation:
Institute for Nuclear Study, University of Tokyo, Tanashi, Tokyo, Japan
C. Kim
Affiliation:
Department of Electronics Engineering, Korea University, Kodaira, Tokyo, Japan
Y. Kim
Affiliation:
Department of Electronics Engineering, Korea University, Kodaira, Tokyo, Japan
D. Itoh
Affiliation:
Komatsu Electronic Metals Co., Hiratsuka, Kanagawa, Japan
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Abstract

A remarkable characteristic of the surface barrier detector with a side groove cooled down to the nitrogen temperature has been observed. That is an abrupt decrease of the output noise at a definite voltage in increasing the bias voltage slowly. This is caused by a carrier injection from the side surface of the groove near the neck narrowed by the side groove. This excess noise disappears after the depletion layer goes through the neck of the side groove. This is confirmed by the fact that the capacitance of the detector decreases abruptly with the decrease of the noise at the same bias voltage. This detector is capable to be operated at a voltage higher than this voltage with a low noise. The maximum bias voltage applied to the detector is 3000 V.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 16: Symposium – F Nuclear Radiation Detector Materials , 1982 , 185
Copyright
Copyright © Materials Research Society 1983

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References

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