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High-Spatial-Resolution Cathodoluminescence Measurement of InGaN

Published online by Cambridge University Press:  11 February 2011

Hisashi Kanie
Affiliation:
Dept. of Applied Electronics, Tokyo Univ. of Science, Noda, Chiba, 278–8510, JAPAN.
Hiroaki Okado
Affiliation:
Dept. of Applied Electronics, Tokyo Univ. of Science, Noda, Chiba, 278–8510, JAPAN.
Takaya Yoshimura
Affiliation:
Dept. of Applied Electronics, Tokyo Univ. of Science, Noda, Chiba, 278–8510, JAPAN.
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Abstract

This paper described observation of cathodoluminescence (CL) of microcrystalline InGaN bulk crystals under a scanning electron microscope (SEM) with a high-spatial-resolution (HR) CL measuring apparatus. HR-CL spectra from facets of InGaN crystals vary from facet to facet and are single peaked. Histogram analysis of the CL peak positions of HR spectra from the facets of the crystals in the area scanned during a low-resolution CL measurement shows a two-peaked form with comparable peak wavelengths. The diffusion length of a generated electron- ho le pair or an exciton from the recombination centers with a higher-energy-level state to that with a lower state is estimated to be 500 nm at the longest by the comparison of two monochromatic HR-CL images of adjoining facets.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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References

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