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Highly Arsenic Doped CdTe Layers for the Back Contacts of CdTe Solar Cells

Published online by Cambridge University Press:  01 February 2011

Vincent Barrioz
Affiliation:
v.barrioz@bangor.ac.uk, University of Wales, Bangor, School of Chemistry, Deiniol Road,, Gwynedd, Bangor, LL57 2UW, United Kingdom, +44 (0)1248 382 235, +44 (0)1248 370 528
Yuri Y. Proskuryakov
Affiliation:
y.y.proskuryakov@durham.ac.uk, Durham University, Department of Physics, South Road, Durham, DH1 3LE, United Kingdom
Eurig W. Jones
Affiliation:
chp00c@bangor.ac.uk, University of Wales Bangor, School of Chemistry, Gwynedd, Bangor, LL57 2UW, United Kingdom
Jon D. Major
Affiliation:
j.d.major@durham.ac.uk, Durham University, Department of Physics, South Road, Durham, DH1 3LE, United Kingdom
Stuart J.C. Irvine
Affiliation:
sjc.irvine@bangor.ac.uk, University of Wales Bangor, School of Chemistry, Gwynedd, Bangor, LL57 2UW, United Kingdom
Ken Durose
Affiliation:
ken.durose@durham.ac.uk, Durham University, Department of Physics, South Road, Durham, DH1 3LE, United Kingdom
Dan A. Lamb
Affiliation:
d.a.lamb@bangor.ac.uk, University of Wales Bangor, School of Chemistry, Gwynedd, Bangor, LL57 2UW, United Kingdom
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Abstract

In an effort to overcome the lack of a suitable metal as an ohmic back contact for CdTe solar cells, a study was carried out on the potential for using a highly arsenic (As) doped CdTe layer with metallization. The deposition of full CdTe/CdS devices, including the highly doped CdTe:As and the CdCl2 treatment, were carried out by metal organic chemical vapour deposition (MOCVD), in an all-in-one process with no etching being necessary. They were characterized and compared to control devices prepared using conventional bromine-methanol back contact etching. SIMS and C-V profiling results indicated that arsenic concentrations of up to 1.5 × 1019 at·cm-3 were incorporated in the CdTe. Current-voltage (J-V) characteristics showed strong improvements, particularly in the open-circuit voltage (Voc) and series resistance (Rs): With a 250 nm thick doped layer, the series resistance was reduced from 9.8 Ω·cm2 to 1.6 Ω·cm2 for a contact area of 0.25 cm2; the J-V curves displayed no rollover, while the Voc increased by up to 70 mV (~ 12 % rise). Preliminary XRD data show that there may be an As2Te3 layer at the CdTe surface which could be contributing to the low barrier height of this contact.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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