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Higher efficiency of n-i-p solar cells by Hot-Wire CVD at moderate temperatures

Published online by Cambridge University Press:  17 March 2011

Marieke K. van Veen  and
Ruud E.I. Schropp
Marieke K. van Veen
Affiliation:
Utrecht University, Debye Institute, Physics of Devices, P.O. Box 80.000, 3508 TA Utrecht, The Netherlands
Ruud E.I. Schropp
Affiliation:
Utrecht University, Debye Institute, Physics of Devices, P.O. Box 80.000, 3508 TA Utrecht, The Netherlands
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Abstract

Hot-Wire deposited amorphous silicon is an excellent material for the incorporation as the absorbing layer in n-i-p solar cells. We decreased the deposition temperature from 430 °C to 250 °C, keeping device quality (opto-)electrical properties of the a-Si:H layers. This enables application of Hot-Wire deposited a-Si:H in p-i-n structures and tandem solar cells. Layers deposited at 250 °C have been applied in efficient n-i-p and n-i-p/n-i-p solar cells. The deposition rate of the intrinsic layer was about 10 Å/s. No optical enhancements, like texturing or back reflectors, were used. Single-junction cells with a fill factor of 0.72 and an open-circuit voltage of 0.89 V have been produced. On a flexible stainless steel substrate, an initial efficiency of 7.2 % was recorded. Tandem cells also show a high fill factor (0.71) and open-circuit voltage (1.70 V), resulting in an initial efficiency of 8.5 %.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A11.2
Copyright
Copyright © Materials Research Society 2001

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