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High-Energy Backscattered Electron Imaging of Voids in Aluminum Metallizations

Published online by Cambridge University Press:  15 February 2011

D. M. Follstaedt ,
J. A. Van Den Avyle ,
A. D. Romig Jr.  and
J. A. Knapp
D. M. Follstaedt
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185-5800 USA
J. A. Van Den Avyle
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185-5800 USA
A. D. Romig Jr.
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185-5800 USA
J. A. Knapp
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185-5800 USA
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Abstract

Backscattered electron imaging of microcircuits in scanning transmission electron microscopes at 120 kV is shown to produce improved images of voids in passivated Al metallization lines relative to those obtained with scanning electron microscopes at ≤ 40 kV. At 120 kV, resolutions of about 0.1 μm are achieved for voids imaged beneath 1.0 μm glass overlayers. This technique allows improved characterization of microstructures for basic investigations of void formation and more accurate counting of voids in microcircuits without removing glass overlayers. Smaller voids should also be detectable with the higher voltage.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 225: Symposium G – Materials Reliability Issues in Microelectronics , 1991 , 225
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1. 1990 IEEE Annual International Reliability Physics Symposium (IEEE, New York, 1990); see page 193 for an overview.Google Scholar
2. Thomas, R. W. and Calabrese, D. W., IEEE 1983 International Reliability Physics, (IEEE, New York, 1983), 1.Google Scholar
3. Yost, F. G., Amos, D. E. and Romig, A. D. Jr., 1989 IEEE Annual International Reliability Physics Symposium, (IEEE, New York, 1989), 193.Google Scholar
4. Yost, F. G., Romig, A. D. Jr., and Bourcier, R. J., “Stress Driven Diffusive Voiding of Aluminum Conductor Lines: A Model for Time Dependent Failure”, Sandia National Laboratories Report # SAND88–0946, August 1988.Google Scholar
5. Cuddihy, E. F., Lawton, R. A. and Galvin, T. R., IEEE Transactions on Reliability 39, 564 (1990).Google Scholar
6. Goldstein, J. I., in Practical Scanning Electron Microscopy, edited by Goldstein, J. I. and Yakowitz, H. (Plenum Press, New York, 1975), p. 57.Google Scholar
7. Newbury, D. E., in Principles of Analytical Electron Microscopy, edited by Joy, D. C., Romig, A. D. and Goldstein, J. I., (Plenum Press, New York, 1986), p. 11.Google Scholar