High Temperature Stable Titanium Carbide Ohmic and Schottky Contacts to SiC
Published online by Cambridge University Press: 10 February 2011
Epitaxial titanium carbide is investigated as a low resistivity, high temperature stable Ohmic and Schottky contact to 4H and 6H SiC. The titanium carbide films were deposited at 500°C using co-evaporation of titanium (e-beam) and C60 (Knudsen cell) in a UHV system. Schottky diodes and TLM structures were fabricated on low and high doped SiC material respectively. The samples were annealed at 700 °C in a vacuum furnace, and electrical measurements were performed up to 300 °C.
- Research Article
- MRS Online Proceedings Library (OPL) , Volume 512: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , 1998 , 125
- Copyright © Materials Research Society 1998