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High Temperature Annealing Behaviors of Luminescent Siox:H Films

Published online by Cambridge University Press:  10 February 2011

Zhixun Ma
Affiliation:
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
Xianbi Xiang
Affiliation:
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
Shuran Sheng
Affiliation:
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
Xianbo Liao
Affiliation:
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
Chunlin Shao
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Nagoya, 466-8555, Japan
Masayoshi Umeno
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Nagoya, 466-8555, Japan
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Abstract

The effects of high temperature annealing on the microstructure and optical properties of luminescent SiOx:H films have been investigated. Micro-Raman scattering and IR absorption, in combination with atomic force microscopy (AFM), provide evidence for the existence of both a-Si clusters in the as-grown a-SiOx:H and Si nanocrystals in the 1170°C annealed films. The dependence of optical coefficients (μ) on photon energy (hv) near the absorption edge (Eg) is found to follow the square root law: (μhv)½ μ (Eg – hv), indicating that nano-Si embedded in Si02 is still an indirect material. A comparison of the deduced absorption edge with the PL spectra shows an obvious Stokes shift, suggesting that phonons should be involved in the optical transition process.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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