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High Resolution Transmission Electron Microscopy of PbTe/Pb1-zEuxSeyTe1-v, Heterostructures.

Published online by Cambridge University Press:  26 February 2011

L. Salamanca-Young ,
D. L. Partin ,
J. Heremans  and
E. M. Dresselhaus
L. Salamanca-Young
Affiliation:
General Motors Research Laboratories, Warren, MI 48090–9055
D. L. Partin
Affiliation:
General Motors Research Laboratories, Warren, MI 48090–9055
J. Heremans
Affiliation:
General Motors Research Laboratories, Warren, MI 48090–9055
E. M. Dresselhaus
Affiliation:
General Motors Research Laboratories, Warren, MI 48090–9055
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Abstract

High resolution transmission electron microscopy has been used to study the structure of PbTe/Pb1-zEuxSeyTe1-v semiconductor superlattices and heterojunctions grown on BaF2 substrates by molecular beam epitaxy. The objective of this study is to analyze the interface sharpness and the structural perfection of the samples at their interfaces. In the PbTe/Pb1-zEuxSeyTe1-v system, we have observed misfit dislocations and even amorphous regions for high Eu concentrations. We have also observed two directions of growth of the superlattice film. The interface appears to be sharp to approximately three monolayers. A model for the superlattice structure is suggested and used to obtain simulated images using computing methods. The simulated images are compared with those obtained experimentally.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 77: Symposium D – Interfaces, Superlattices, and Thin Films , 1986 , 199
Copyright
Copyright © Materials Research Society 1987

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References

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