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High Performance N-type Organic Thin-Film Transistors with Inert Contact Metals

Published online by Cambridge University Press:  31 January 2011

Sarah Schols
Affiliation:
sarah.schols@imec.be, IMEC, PME, Leuven, Belgium
Lucas Van Willigenburg
Affiliation:
luuk.vanwilligenburg@imec.be, IMEC, PME, Leuven, Belgium
Robert Müller
Affiliation:
robert.muller@imec.be, IMEC, PME, Leuven, Belgium
Dieter Bode
Affiliation:
dieter.bode@imec.be, IMEC, PME, Leuven, Belgium
Maarten Debucquoy
Affiliation:
maarten.debucquoy@imec.be, IMEC, PME, Leuven, Belgium
Jan Genoe
Affiliation:
jan.genoe@imec.be, IMEC, PME, Leuven, Belgium
paul Heremans
Affiliation:
Paul.heremans@imec.be, IMEC, PME, Leuven, Belgium
Shaofeng Lu
Affiliation:
info@polyera.com, Polyera Corp., Skokie, Illinois, United States
Antonio Facchetti
Affiliation:
a-facchetti@northwestern.edu, Polyera Corp., Skokie, Illinois, United States
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Abstract

Thin film growth by high vacuum evaporation of the n-type organic semiconductor 5, 5″′-diperfluorohexylcarbonyl-2,2′:5′,2″:5″,2″′-quaterthiophene (DFHCO-4T) on poly-(α-methylstyrene)-coated n++-Si/SiO2 substrates is investigated at various deposition fluxes and substrate temperatures. Film characterization by atomic force microscopy reveals typical Stransky-Krastanov growth. Transistors with Au source-drain top contacts and optimized DFHCO-4T deposition conditions attain an apparent saturation mobility of 4.6 cm2/Vs, whereas this parameter is 100× lower for similar transistors with LiF/Al top contacts. We explain this lower performance by the formation of a thin interfacial layer with poor injection properties resulting from a redox reaction between Al and DFHCO-4T.

Type
Research Article
Copyright
Copyright © Materials Research Society 2009

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