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High Mobility Nanocrystalline Silicon TFTs for Display Application

Published online by Cambridge University Press:  01 February 2011

Min-Koo Han
Affiliation:, Seoul National University, School of Electrical Engineering, School of Electric Engineering and Computer Science (#50), Seoul National University, Seoul, 151-742, Korea, Republic of
Sang-Myeon Han
Affiliation:, Seoul National University, School of Electrical Engineering, School of Electric Engineering and Computer Science (#50), Seoul National University, Seoul, 151-742, Korea, Republic of
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Nanocrystalline silicon (nc-Si) thin film transistors (TFTs) of which active layer thickness was 100nm were fabricated using inductively coupled plasma chemical vapor deposition (ICP-CVD) at 150°C. The fabricated nc-Si TFT exhibits rather high field effect mobility exceeding 22cm2/Vs and excellent sub-threshold slope of 0.45V/dec. The nc-Si film deposited 150°C as an active layer of the TFT shows high crystallinity more than 70% and very thin incubation layer less than 20nm. ICP-CVD provides high density plasma with reduced ion bombardment during the deposition on nc-Si and He dilution can enhance the decomposition of SiH4 into Si, SiHX radicals and atomic H, so that high quality nc-Si film can be fabricated. The gate insulator SiO2 film deposited by ICP-CVD at 150°C shows good electrical characteristics such as flat band voltage of -1.8V and breakdown voltage of 6.2MV/cm.

Research Article
Copyright © Materials Research Society 2007

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