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High Dose Rate Oxygen Implantation for Formation of Silicon-on-Insulator Structures

Published online by Cambridge University Press:  26 February 2011

E. Cortesi ,
F. Namavar ,
R. F. Pinizzotto  and
H. Yang
E. Cortesi
Affiliation:
Spire Corporation, Patriots Park, Bedford, MA, 01730
F. Namavar
Affiliation:
Spire Corporation, Patriots Park, Bedford, MA, 01730
R. F. Pinizzotto
Affiliation:
University of North Texas, Denton, TX, 76203
H. Yang
Affiliation:
University of North Texas, Denton, TX, 76203
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Abstract

We have studied Separation by IMplantation of OXygen (SIMOX) processes using very high dose rates (40–60 μA/cm2). For a dose of 4 × 1017 O+/cm2 at 160 keV, the structure formed by implantation at 50 μA/cm2 is very similar to that associated with lower dose rates. The same dose implanted at a dose rate of 60 μA/cm2, however, results in the formation of pits in the silicon surface as well as a somewhat different oxide structure. Implantation through a surface oxide layer appears to result in a structure similar to that associated with lower dose rate implantation. These and higher dose samples suggest that the threshold for pit formation is related to both dose rate and dose.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 201: Symposium A – Surface Chemistry and Beam-Solid Interactions , 1990 , 259
Copyright
Copyright © Materials Research Society 1991

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References

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