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Heterojunction, Vacuum-Glass Field Effect Transistors

Published online by Cambridge University Press:  01 February 2011

Michael W. Geis ,
Sandra Deneault ,
Keith E. Krohn ,
Michael Marchant ,
David L. Cooke  and
Theodore M. Lyszczarz
Michael W. Geis
Affiliation:
SPANOS@LL.MIT.EDU, MIT Lincoln Laboratory, Submicrometer Technology, 244 Wood St., Lexington, MA, 02420, United States, 781-981-4658, 781-981-4983
Sandra Deneault
Affiliation:
deneault@ll.mit.edu, MIT Lincoln Laboratory, Submicrometer Technology, United States
Keith E. Krohn
Affiliation:
krohn@ll.mit.edu, MIT Lincoln Laboratory, Submicrometer Technology, United States
Michael Marchant
Affiliation:
marchant@ll.mit.edu, MIT Lincoln Laboratory, Submicrometer Technology, United States
David L. Cooke
Affiliation:
David.Cooke@hanscom.af.mil, U.S. Air Force Research Laboratory, United States
Theodore M. Lyszczarz
Affiliation:
tedl@ll.mit.edu, MIT Lincoln Laboratory, Submicrometer Technology, United States
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Abstract

This note reports on a surface field effect transistor, SFET, where the electron channel consists of the interface between vacuum and a Cs-doped glass, and an electrode on the back of the glass substrate is used as the gate. The device has a transconductance of 4×10−10 S cm−1. The transconductance is limited by the glass surface roughness, ∼ 0.4 nm RMS. A reduction of surface roughness to 0.1 nm RMS is expected to increase device transconductance.

Keywords

field emissionsurface chemistrydiamond
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 891: Symposium EE – Progress in Semiconductor Materials V – Novel Materials and Electronics and Optoelectronic Applications , 2005 , 0891-EE07-11
Copyright
Copyright © Materials Research Society 2006

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References

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