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Heteroepitaxial Growih and Characterization of Titanium Films on Alpha (6H) Silicon Carbide

Published online by Cambridge University Press:  25 February 2011

L.M. Spellman ,
R.C. Glass ,
R.F. Davis ,
T.P. Humphreys ,
Hyeongtag Jeon ,
R.J. Nemanich ,
Sopa Chevacharoenkul  and
N.R. Parikh
L.M. Spellman
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7907
R.C. Glass
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7907
R.F. Davis
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7907
T.P. Humphreys
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695–8202
Hyeongtag Jeon
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695–8202
R.J. Nemanich
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695–8202
Sopa Chevacharoenkul
Affiliation:
MCNC, Center for Microelectronics, P.O. Box 12889, Research Triangle Park, NC 27709
N.R. Parikh
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27599–3255
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Abstract

In the present study we report the first results pertaining to the heteroepitaxial growth of Ti films on 6H-SiC (0001). The Ti epitaxial films of typically 400–1000 Å thickness have been deposited at room temperature in ultra-high vacuum (< 10−9 torr) using both thermal and electron beam evaporation sources. In-vacuo techniques of low energy electron diffraction (LEED) and x-ray photoelectron spectroscopy (XPS) have been used to monitor the surface structure and interface chemistry during growth. An unreconstructed (1×1) ordered LEED pattern corresponding to that of the SiC (0001) surface was observed for all Ti coverages. Epitaxial growth of Ti has been confirmed from cross-sectional TEM diffraction patterns and images, which indicate the presence of threading dislocations to relieve a 4% lattice mismatch strain. Rutherford backscattering (RBS) with channeling of 2 MeV He+ ions gave X = 0.71 for Ti deposited at room temperature. Current-voltage measurement for both un-annealed and annealed Ti contacts displayed rectifying characteristics with low leakage currents (≈, 6 nA at −10V) and low ideality factors (1.02–1.08).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 221: Symposium C – Heteroepitaxy of Dissimilar Materials , 1991 , 99
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

[1] Pelletier, J., Gervais, D., and Pomot, C., J. Appl. Phys. Lett. 64, 2672 (1988).Google Scholar
[2] Waldrop, J.R. and Grant, R.W., Appl. Phys. 55, 432 (1984).Google Scholar
[3] Bauer, E.G. et al. , J. Mater. Res., 5 (4), 852 (1990).Google Scholar
[4] Rahaman, M.N., Bioteau, Y., and Jonghe, L.C. De, Am. Ceram. Soc. Bull. 65, 1171 (1986).Google Scholar
[5] Rahaman, M.N. and Jonghe, L.C. De, Am. Ceram. Soc. Bull. 66, 782 (1987).Google Scholar
[6] Taylor, T.N.. J. Mater. Res. 4, 189 (1989).Google Scholar
[7] Wagner, C.D., Riggs, W.M., Davis, L.E., Moulder, J.F., and Muilenberg, G.E., Handbook of X-ray Photoelectron Spectroscopy (Physical Electronics Division, Perkin-Elmer Corp., Eden Prairie, MN, 1979), p. 9.Google Scholar
[8] Lane, J.E., Carter, C.H., More, K.L., and Davis, R.F., J. Mater. Res. 1, 737 (1986).Google Scholar
[9] Rhoderick, E.H. and Williams, R.H. in Metal-Semiconductor Contacts, 2nd Ed. (Oxford University, New York, 1988), p. 39.Google Scholar
[10] Backhaus-Ricoult, M., Acta-Scripta Met. Proc., 4, 79 (1989).Google Scholar