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HDP-FSG Integration in Multilevel Interconnect Devices

Published online by Cambridge University Press:  10 February 2011

Hichem M'saad
Applied Materials, Santa Clara, CA 95054.
Manoj Vellaikal
Applied Materials, Santa Clara, CA 95054.
Lin Zhang
Applied Materials, Santa Clara, CA 95054.
Derek Witty
Applied Materials, Santa Clara, CA 95054.
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HDP-FSG has been integrated as an inter-metal dielectric in a multilevel interconnect scheme. Process regimes for obtaining stable HDP-FSG films were identified. Gap-fill of high aspect ratio structures was achieved for 0.18µm technology node. HDP-FSG film stability, homogeneity, and impurity content were evaluated. In addition to the development of the HDP-FSG process, integration of the interconnect module was investigated and optimized. Analysis of the AI/FSG interface integrity was tested for gap-fill and corrosion with SEM and for fluorine diffusion with SIMS. CMP rate of the FSG was determined and compared to HDP-USG. Al metallization integration approaches in conjunction with FSG were identified.

Research Article
Copyright © Materials Research Society 1999

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1. Loboda, M., Toskey, G., Solid State Technology, 99 (1998).Google Scholar
2. Baud, L., Passemard, G., Gobil, Y., M'Saad, H., Corte, A., Pires, F., Fugier, P., Noel, P., Rabinzohn, P., Beinglass, I., Microelectronic Engineering, 37/38, 261 (1997).Google Scholar
3. Shen, Yu-Lin, IEEE Transactions on Components, Packaging, and Manufacturing Technology- Part A, 21 (1998).Google Scholar
4. Grivna, G., Leathersich, C., Shin, H., Cowden, W., J. Vac. Sci. Technol. B 11, 55, (1993).Google Scholar
5. Hu, C.-K., Rodbell, K. P., lee, K. Y., Sullivan, T., Bouldin, D. P., Proceedings of the Sixth International Symposium on Ultra Large Scale Integration Science and Technology, 97–3, 347 (1997).Google Scholar
6. HDP-USG FT-IR spectra show the presence of a Si-OH peak at 3650 cm−1.Google Scholar
7. Loboda, M., Toskey, G., Solid State Technology, 99 (1998).Google Scholar
8. Olewine, M., Wall, R., and Colovos, G., SPIE Conference on Multilevel Interconnect Technology II, 3508 42 (1998).Google Scholar
9. Jain, V., Pramanik, D., Nariani, S. R., Chang, K. Y., VMIC Conference, 272 (1991).Google Scholar
10. Machida, K., Shimoyama, N., Takahashi, J., Takahashi, Y., Yabumoto, N., Arai, E., IEEE Transactions on Electron Devices, 41, 709 (1994).Google Scholar
11. Hasegawa, T., Kobayashi, T., Kadomura, S. and Aoyama, J., DUMIC Conference 197 (1995).Google Scholar
12. Shimooka, Y., Matsuno, T., Ui, A., Miyajima, H., Kaji, N., Nojo, H., Tateyama, Y., and Shibata, H., VMIC Conference, 119 (1997).Google Scholar