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Growth of Ultra-thin Titanium Dioxide Films by Complete Anodic Oxidation of Titanium Layers on Conductive Substrates

Published online by Cambridge University Press:  11 December 2012

Karsten Wolff
Affiliation:
Tampere University of Technology, Department of Electronics, Printed and Organic Electronics Group, P.O. Box 692, 33101 Tampere, Finland
Petri Heljo
Affiliation:
Tampere University of Technology, Department of Electronics, Printed and Organic Electronics Group, P.O. Box 692, 33101 Tampere, Finland
Donald Lupo
Affiliation:
Tampere University of Technology, Department of Electronics, Printed and Organic Electronics Group, P.O. Box 692, 33101 Tampere, Finland
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Abstract

The growth of thin and ultra-thin titanium dioxide layers was investigated. Oxide films were grown by galvanostatic and potentiodynamic anodisation of evaporated titanium layers on conductive substrates. It is shown that thin-film oxidation differs significantly from anodic oxidation of solid foils or plates, due to the sudden stop of anodisation process before complete oxidation of the thick films. Depending on the pH value and the potential sweep rate, the effective defect density and the dielectric constant of the anodized layers vary from 3·1019 cm-3 to 1020 cm-3and from 16 to 27, respectively, whereas the electrolyte temperature plays only a minor role.

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Copyright
Copyright © Materials Research Society 2012 

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References

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Growth of Ultra-thin Titanium Dioxide Films by Complete Anodic Oxidation of Titanium Layers on Conductive Substrates
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