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Growth of Improved GaAs/Si: Suppression of Volmer-Weber Nucleation for Reduced Threading Dislocation Density

Published online by Cambridge University Press:  10 February 2011

P. J. Taylor
Affiliation:
Dept. Mat. Sci. and Engineering, University of Virginia, Charlottesville, VA 22903 now at M.I.T. Lincoln Laboratory, 244 Wood Street, Lexington, MA 02420)
W.A. Jesser
Affiliation:
Dept. Mat. Sci. and Engineering, University of Virginia, Charlottesville, VA 22903
G. Simonis
Affiliation:
Optoelectronics Division, US Army Research Laboratory, Adelphi, MD. 20783
W. Chang
Affiliation:
Optoelectronics Division, US Army Research Laboratory, Adelphi, MD. 20783
M. Lara-Taysing
Affiliation:
Optoelectronics Division, US Army Research Laboratory, Adelphi, MD. 20783
J. Bradshaw
Affiliation:
Optoelectronics Division, US Army Research Laboratory, Adelphi, MD. 20783
W. Clark
Affiliation:
Optoelectronics Division, US Army Research Laboratory, Adelphi, MD. 20783
M. Martinka
Affiliation:
CECOM Night-Vision and Electronic Sensors Directorate, Fort Belvoir, VA 22060
J.D. Benson
Affiliation:
CECOM Night-Vision and Electronic Sensors Directorate, Fort Belvoir, VA 22060
J.H. Dinàn
Affiliation:
CECOM Night-Vision and Electronic Sensors Directorate, Fort Belvoir, VA 22060
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Abstract

The growth of reduced dislocation density GaAs/Si is performed by a novel two-step technique where the first epitaxy step takes place at 75° C and the second is performed at 580° C. The initial deposition is single crystal, continuous, and planar such that there is no contribution to the dislocation density from Volmer-Weber island coalescence and no trapping of dislocations in pinholes. Using this new growth technique, a reduced dislocation density the order of 106/cm2 was obtained. The improved crystallinity is indicated by the more narrow x-ray full-width-at-half-maximum (FWHM) value of 110 arcseconds. GaAs p-i-n diodes were grown on the reduced dislocation density GaAs/Si and it was found that the resistivity of the intrinsic region for the heteroepitaxial diodes was similar to homoepitaxial ones for small mesa sizes.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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