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Growth of Epitaxial Potassium Niobate Film on (100)SrRuO3/(100)SrTiO3 by Hydrothermal Method and their Electromechanical Properties

Published online by Cambridge University Press:  01 February 2011

Mutsuo Ishikawa ,
Shintaro Yasui ,
Satoshi Utsugi ,
Takashi Fujisawa ,
Tomoaki Yamada ,
Takeshi Morita ,
Minoru Kurosawa  and
Hiroshi Funakubo
Mutsuo Ishikawa
Affiliation:
ishikawa.m.ai@m.titech.ac.jp, Tokyo Institute of Technology, Yokohama, Japan
Shintaro Yasui
Affiliation:
yasui.s.aa@m.titech.ac.jp, Tokyo Institute of Technology, Yokohama, Kanagawa, Japan
Satoshi Utsugi
Affiliation:
utsugi.s.aa@m.titech.ac.jp, Tokyo Institute of Technology, Yokohama, Kanagawa, Japan
Takashi Fujisawa
Affiliation:
fujisawa.t.ac@m.titech.ac.jp, Tokyo Institute of Technology, Yokohama, Kanagawa, Japan
Tomoaki Yamada
Affiliation:
yamada.t.al@m.titech.ac.jp, Tokyo Institute of Technology, Yokohama, Kanagawa, Japan
Takeshi Morita
Affiliation:
morita@k.u-tokyo.ac.jp, The University of Tokyo, Kashiwa, Japan
Minoru Kurosawa
Affiliation:
mkur@ip.titech.ac.jp, Tokyo Institute of Technology, Yokohama, Kanagawa, Japan
Hiroshi Funakubo
Affiliation:
funakubo@mte.biglobe.ne.jp, Tokyo Institute of Technology, Yokohama, Kanagawa, Japan
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Abstract

Epitaxaially-grown KNbO3 thick films over 8 μm in thickness were successfully grown at 220 °C for 6 h on (100)cSrRuO3//SrTiO3 substrates by a hydrothermal method. Epitaxial SrRuO3 layers grown on (100)cSrTiO3 substrates by sputter method were used as bottom electrode layers. Relative dielectric constant and the dielectric loss were 530 and 0.11, respectively. Clear hysteresis loops originated to the ferreoelectricity were observed and a remanent polarization was 25 μC/cm2 at a maximum applied electric field of 540 kV/cm. In addition, the hydrothermal KNbO3 thick film was able to transmitting and receiving of ultrasonic waves over 50MHz.

Keywords

ferroelectrichydrothermalmicroelectronics
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1139: Symposium GG – Microelectromechanical Systems–Materials and Devices II , 2008 , 1139-GG03-52
Copyright
Copyright © Materials Research Society 2009

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References

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