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Growth of c-GaN Films on the Nitridated β-Ga2O3 Substrates Using RF-MBE

Published online by Cambridge University Press:  01 February 2011

Tsutomu Araki
Affiliation:
tara@se.ritsumei.ac.jp, Ritsumeikan Univ., Dept. of Photonics, 1-1-1 Noji-higashi, Kusatsu, Shiga, 5258577, Japan, +81-77-561-5030, +81-77-561-3994
Chiharu Morioka
Affiliation:
re015990@se.ritsumei.ac.jp, Ritsumeikan Univ., Dept. of Photonics, Japan
Junichi Wada
Affiliation:
re017997@se.ritsumei.ac.jp, Ritsumeikan Univ., Dept. of Photonics, Japan
Keisuke Fujiwara
Affiliation:
ro008003@se.ritsumei.ac.jp, Ritsumeikan Univ., Dept. of Photonics, Japan
Hiroshi Minami
Affiliation:
ro013011@se.ritsumei.ac.jp, Ritsumeikan Univ., Dept. of Photonics, Japan
Yasushi Nanishi
Affiliation:
nanishi@se.ritsumei.ac.jp, Ritsumeikan Univ., Dept. of Photonics, Japan
Shigeo Ohira
Affiliation:
shigeo-ohira@nikkeikin.co.jp, Nippon Light Metal Co. Ltd., Japan
Norihito Suzuki
Affiliation:
norihito-suzuki@nikkeikin.co.jp, Nippon Light Metal Co. Ltd., Japan
Toetsu Shishido
Affiliation:
tara@se.ritsumei.ac.jp, Tohoku University, Institute for Materials Research, Japan
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Abstract

Cubic GaN is successfully grown on β-Ga2O3 by molecular beam epitaxy for the first time. Prior nitridation of the (100) β-Ga2O3 single-crystal substrate by exposure to electron cyclotron resonance nitrogen plasma causes the formation of a surficial (001) c-GaN layer, upon which homo-epitaxial growth of c-GaN can be achieved by radio-frequency molecular beam epitaxy. The epitaxial relationship is confirmed by electron microscopy to be (001) c-GaN // (100) β-Ga2O3, [110] c-GaN // [010] β-Ga2O3, and [1-10] c-GaN // [001] β-Ga2O3.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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References

1. Tippins, H. H., Phys. Rev. 140, A316 (1965).CrossRefGoogle Scholar
2. Geller, S., J. Chem. Phys. 33, 676 (1960).CrossRefGoogle Scholar
3. Shimamura, K., Villora, E. G., Domen, K., Yui, K., Aoki, K. and Ichinose, N., Jpn. J. Appl. Phys. 44, L7 (2005).Google Scholar
4. Ohira, S., Wada, J., Morioka, C., Fujiwara, K., Yamaguchi, T., Araki, T., Nanishi, Y. and Shishido, T., The 6th International Conference on Nitride Semiconductors (ICNS-6), Mo-P-032 (2005).Google Scholar

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Growth of c-GaN Films on the Nitridated β-Ga2O3 Substrates Using RF-MBE
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Growth of c-GaN Films on the Nitridated β-Ga2O3 Substrates Using RF-MBE
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