Skip to main content Accessibility help
×
Home
Hostname: page-component-cf9d5c678-h2mp8 Total loading time: 0.159 Render date: 2021-07-27T00:44:03.891Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": true, "newCiteModal": false, "newCitedByModal": true, "newEcommerce": true, "newUsageEvents": true }

Growth of AlGaN/GaN HEMTs on 3C-SiC/Si(111) Substrates

Published online by Cambridge University Press:  01 February 2011

Yvon Cordier
Affiliation:
yc@crhea.cnrs.fr, CNRS, CRHEA, rue B. Gregory, Sophia Antipolis, Valbonne, 06560, France, +33 4 93 95 42 00, +33 4 93 95 83 61
Marc Portail
Affiliation:
mpo@crhea.cnrs.fr, CNRS-CRHEA, rue Bernard Gregory, Sophia Antipolis, Valbonne, 06560, France
Sébastien Chenot
Affiliation:
sc@crhea.cnrs.fr, CNRS-CRHEA, rue Bernard Gregory, Sophia Antipolis, Valbonne, 06560, France
Olivier Tottereau
Affiliation:
ot@crhea.cnrs.fr, CNRS-CRHEA, rue Bernard Gregory, Sophia Antipolis, Valbonne, 06560, France
Marcin Zielinski
Affiliation:
mz@crhea.cnrs.fr, Novasic, Savoie Technolac, Arche Bât. 4, BP 267, Le Bourget du Lac, 73375, France
Thierry Chassagne
Affiliation:
tc@crhea.cnrs.fr, Novasic, Savoie Technolac, Arche Bât. 4, BP 267, Le Bourget du Lac, 73375, France
Get access

Abstract

In this work, we study cubic SiC/Si (111) templates as an alternative for growing GaN on silicon. We first developed the epitaxial growth of 3C-SiC films on 50mm Si(111) substrates using chemical vapor deposition. Then, AlGaN/GaN high electron mobility transistors were grown by molecular beam epitaxy on these templates. Both the structural quality and the behavior of transistors realized on these structures show the feasibility of this approach.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Wu, Y.F. Saxler, A. Moore, M. Smith, R.P. Sheppard, S. Chavarkar, P.M. Wisleder, T. Mishra, U.K. and Parikh, P. IEEE Electron Dev. Lett. Vol. 25 (2004), p. 117.CrossRefGoogle Scholar
2. Shen, L. Palacios, T. Poblenz, C. Corrion, A. Chakraborty, A. Fichtenbaum, N. Keller, S. DenBaars, S.P. Speck, J.S. and Mishra, U.K. IEEE Electron Dev. Lett. Vol. 27 (2006), p. 214.CrossRefGoogle Scholar
3. Johnson, J.W. Piner, E.L. Vescan, A. Therrien, R. Rajagopal, P. Roberts, J.C. Brown, J.D. Singhal, S., and Linthicum, K.J. IEEE Electron Dev. Lett. Vol. 25 (2004), p. 459.CrossRefGoogle Scholar
4. Behtash, R. Tobler, H. Marschall, P. Schurr, A. Leier, H. Cordier, Y., Semond, F., Natali, F., and Massies, J., IEE Electronics Letters, Vol. 39 (2003), p. 626.CrossRefGoogle Scholar
5. Storm, D.F. Katzer, D.S. Roussos, J.A. Mittereder, J.A. Bass, R. Binari, S.C. Hanser, D. Preble, E.A. and Evans, K.R. J. Crystal. Growth. Vol. 301/302 (302), p. 2007.Google Scholar
6. Cordier, Y. Semond, F. Massies, J. Leroux, M. Lorenzini, P. and Chaix, C. J. Crystal. Growth Vol. 301/302 (2007), p.434 CrossRefGoogle Scholar
7. As, D. J. Potthast, S. Fernandez, J. Lischka, K. Nagasawa, H. and Abe, M. Microelectronic Engineering. 83 (2006), p. 34 CrossRefGoogle Scholar
8. Komiyama, J. Abe, Y. Suzuki, S. and Nakanishi, H. Appl. Phys. Lett. Vol. 88 (2006), p. 091901.CrossRefGoogle Scholar
9. Komiyama, J. Abe, Y. Suzuki, S. and Nakanishi, H. J. Appl. Phys. 100 (2006), p. 033519 CrossRefGoogle Scholar
10. Liaw, H.M. Venugopal, R. Wan, J. and Melloch, M.R. Solid-State Electron. Vol. 45 (2001), p. 1173.CrossRefGoogle Scholar
11. Takeuchi, T. Amano, H. Hiramatsu, K. Sawaki, N. and Akasaki, I. J. Crystal. Growth Vol. 115 (1991), p. 634.CrossRefGoogle Scholar
12. Chassagne, T. Leycuras, A. Balloud, C. Arcade, P. Peyre, H. and Juillaguet, S. Mat. Sci. Forum Vol. 457/460 (460), p. 2004.Google Scholar
13. Nishino, S. Powell, J. A. and Will, H. A. Appl. Phys. Lett. 42 (1983), p. 460 CrossRefGoogle Scholar
14. Semond, F. Cordier, Y. Grandjean, N. Natali, F. Damilano, B. S. Vezian and Massies, J. Phys. Stat. Sol. (a) Vol. 188 (2001), p. 501.3.0.CO;2-6>CrossRefGoogle Scholar
15. Vézian, S., Natali, F. Semond, F. and Massies, J. Phys. Rev. Vol. B 69 (2004), p. 125329 CrossRefGoogle Scholar
16. Ambacher, O. Foutz, B. Smart, J. Shealy, J.R. Weimann, N.G. Chu, K. Murphy, M. Sierakowski, A.J. Schaff, W.J. Eastman, L.F. Dimitrov, R. Mitchell, A. and Stutzmann, M. J. Appl. Phys. Vol. 87 (2000), p. 334.CrossRefGoogle Scholar

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Growth of AlGaN/GaN HEMTs on 3C-SiC/Si(111) Substrates
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Growth of AlGaN/GaN HEMTs on 3C-SiC/Si(111) Substrates
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Growth of AlGaN/GaN HEMTs on 3C-SiC/Si(111) Substrates
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *